Photochemical reaction device

ABSTRACT

According to one embodiment, a photochemical reaction device comprises a laminated body and an ion transfer pathway. A laminated body comprises an oxidation catalyst layer for producing oxygen and protons by oxidizing water a reduction catalyst layer for producing carbon compounds by reducing carbon dioxide and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and developing charge separation with light energy. An ion transfer pathway moves ions between the oxidation catalyst layer side and the reduction catalyst layer side.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation application of PCT Application No.PCT/JP2013/080198, filed Nov. 8, 2013 and based upon and claims thebenefit of priority from the prior Japanese Patent Application No.2012-254701, filed Nov. 20, 2012, the entire contents of which areincorporated herein by reference.

FIELD

Embodiments of the present invention relate to a photochemical reactiondevice.

BACKGROUND

Reducing CO₂ efficiently by light energy like plants has been requiredfrom the standpoint of energy problems and environmental concerns.Plants use a system called the Z-scheme to excite light energy in twostages. Using a photochemical reaction of this system, plants synthesizecellulose and sugar by obtaining electrons from water (H₂O) and reducingcarbon dioxide (CO₂).

However, few technologies that can efficiently dissolve CO₂ withelectrons obtained from water through artificial photosynthesis withoutusing any sacrificial reagent are available.

A photochemical reaction device disclosed in JP-A-2011-094194, forexample, has an oxidation reaction electrode for producing oxygen (O₂)by oxidizing H₂O and a reduction reaction electrode for producing acarbon compound by reducing CO₂. The oxidation reaction electrode has anoxidation catalyst for oxidizing H₂O on a surface of a photocatalyst andgains potential with light energy. The reduction reaction electrode hasa reduction catalyst for reducing CO₂ on a surface of the photocatalystand is connected to the oxidation reaction electrode with an electricwire. The reduction reaction electrode reduces CO₂ to produce formicacid (HCOOH) by gaining reduction potential of CO₂ from the oxidationreaction electrode. To gain the potential necessary for reducing CO₂using an optical wavelength and a photocatalyst, the photochemicalreaction device thus employs a Z-scheme-type artificial photosynthesissystem that imitates plants.

However, JP-A-2011-094194, the solar energy conversion efficiency isvery low at around 0.04%. This is because the energy efficiency of thephotocatalyst excited by the optical wavelength is low. Because thereduction reaction electrode is connected with the oxidation reactionelectrode with an electric wire, the efficiency in extractingelectricity (electric current) decreases due to interconnectionresistance, and, as a consequence, the efficiency becomes low.

An device that has a configuration to produce a reaction by catalystsdisposed on both sides of a silicon solar cell used for achieving thereaction potential is disclosed in JP-A-H10-290017. S. Y. Reece, et al.,Science. vol. 334. pp. 645 (2011) describes an device which includeslayered silicon solar cells for achieving the reaction potential andproduces an electrolysis of H₂O by disposing catalysts on both sides ofthe silicon solar cells. Both of these devices have a very high solarenergy conversion efficiency of 2.5%.

These devices are easily configured in a large size because they do notneed to be hard-wired. They also have another feature in which amaterial partition process is not necessary because the cell itselfplays a role of a divider plate to insulate materials.

These devices, however, have not succeeded in the reduction reaction ofCO₂. Such plate-like laminate structure moreover does not take intoconsideration the fact that, for the CO₂ reduction reaction, ions with apositive electric charge produced at the oxidation side and ions with anegative electric charge produced at the reduction side need to move tothe opposite sides. In an oxidation-reduction reaction in which H₂O isused as an electron donor instead of a sacrificial catalyst, inparticular, proton (hydrogen ion (H⁺)) movement is indispensable.

A CO₂ dissolution technology that uses light energy and has a highphotoreaction efficiency thus needs to be developed.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 is a cross-sectional view showing a structure of aphotoelectrochemicalcell of an embodiment;

FIG. 2 is a cross-sectional view showing an operating principle of aphotoelectrochemicalcell of the embodiment;

FIG. 3 is a perspective view showing a structure of a photochemicalreaction device of a first embodiment;

FIG. 4 is a cross-sectional view showing the structure of thephotochemical reaction device of the first embodiment;

FIG. 5 is a cross-sectional view showing a structure of a variation 1 ofthe photochemical reaction device of the first embodiment;

FIG. 6 is a cross-sectional view showing a structure of a variation 2 ofthe photochemical reaction device of the first embodiment;

FIG. 7 is a cross-sectional view showing a structure of a variation 3 ofthe photochemical reaction device of the first embodiment;

FIG. 8 is a cross-sectional view showing a structure of a variation 4 ofthe photochemical reaction device of the first embodiment;

FIGS. 9, 10, and 11 are plan views showing the structure of thephotochemical reaction device of the first embodiment;

FIG. 12 is a table of an experimental result showing CO2 photoreductionefficiency in an example 1 in comparison with a comparative example;

FIG. 13 is a cross-sectional view showing a structure of a photochemicalreaction device of a second embodiment;

FIG. 14 is a graph showing a relation between pitch of through-holes anda light absorption rate by a multi-junction photovoltaic cell in thephotochemical reaction device of the second embodiment;

FIG. 15 is a graph showing a relation between equivalent circlediameters of the through-holes and a light absorption rate by themulti-junction photovoltaic cell in the photochemical reaction device ofthe second embodiment;

FIG. 16 is a cross-sectional view showing another structure of thephotochemical reaction device of the second embodiment;

FIG. 17 is a table of an experimental result showing CO2 photoreductionefficiency in an example 2 in comparison with the comparative example;

FIG. 18 is a table of an experimental result showing CO2 photoreductionefficiency in an example 3 comparison with the comparative example;

FIG. 19 is a plan view showing a structure of the photochemical reactiondevice in example 3;

FIG. 20 is a cross-sectional view showing the structure of thephotochemical reaction device in example 3;

FIG. 21 is a cross-sectional view showing an electrolytic tank tomeasure the photochemical reaction device in example 3 and thecomparative example;

FIG. 22 is a cross-sectional view showing a structure of variation 1 ofthe photochemical reaction device of the second embodiment;

FIG. 23 is a cross-sectional view showing a structure of a variation 2of the photochemical reaction device of the second embodiment;

FIG. 24 is a perspective view showing a structure of the photochemicalreaction device of the third embodiment;

FIG. 25 is a cross-sectional view showing a structure of thephotochemical reaction device of the third embodiment;

FIG. 26 is a perspective view showing a variation of the structure ofthe photochemical reaction device of the third embodiment;

FIG. 27 is a cross-sectional view showing the variation of the structureof the photochemical reaction device of the third embodiment; and

FIG. 28 is a plan view showing an application example of thephotochemical reaction device of the third embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a photochemical reaction devicecomprises a laminated body, an ion transfer pathway, and an electrolytictank. The laminated body comprises an oxidation catalyst layer forproducing oxygen and protons by oxidizing water a reduction catalystlayer for producing carbon compounds by reducing carbon dioxide and asemiconductor layer formed between the oxidation catalyst layer and thereduction catalyst layer and developing charge separation with lightenergy. The ion transfer pathway is an opening penetrating the laminatedbody and moves ions between the oxidation catalyst layer side and thereduction catalyst layer side. The electrolytic tank includes thelaminated body therein and comprising an oxidation reaction electrolytictank disposed on the oxidation catalyst layer side and a reductionreaction electrolytic tank disposed on the reduction catalyst layer sideseparated by the laminated body. The area ratio of the opening in thelaminated body is 40% or less.

Referring to the accompanying drawings, an embodiment according to thepresent embodiment will be described. In the drawings, like numbersindicate like parts throughout the views. A repetitive description willbe done as necessary.

1. Photoelectrochemicalcell

Referring to FIGS. 1 and 2, a photoelectrochemicalcell of the embodimentwill be described below.

FIG. 1 is a cross-sectional view showing a structure of aphotoelectrochemicalcell of the embodiment;

As shown in FIG. 1, the photoelectrochemicalcell of the embodiment has alaminated body including a substrate 11, a reflecting layer 12, areduction electrode layer 13, a multi-junction photovoltaic cell 17, anoxidation electrode layer 18, an oxidation catalyst layer 19, and areduction catalyst layer 20. On the front surface (light incidencesurface) of the substrate 11, the reflecting layer 12, the reductionelectrode layer 13, the multi-junction photovoltaic cell 17, theoxidation electrode layer 18, and the oxidation catalyst layer 19 areformed. On the back surface of the substrate 11, the reduction catalystlayer 20 is formed.

The substrate 11 is disposed for the purpose of supporting thephotoelectrochemicalcell and increasing its mechanical strength. Thesubstrate 11 has conductivity and is a metal plate made of a metal suchas Cu, Al, Ti, Ni, Fe, and Ag, or an alloy plate including at least oneof such met als, e.g. SUS. The substrate 11 can be made from conductiveresin or the like. The substrate 11 can also be made of a semiconductorsubstrate such as Si, Ge, etc. As described later, the substrate 11 canbe made of an ion exchange membrane.

The reflecting layer 12 is formed on a surface of the substrate 11. Thereflecting layer 12 is made from a light reflective material such as adistributed Bragg reflecting layer including a metal layer ormulti-layers of semiconductor materials. The reflecting layer 12, bybeing disposed between the substrate 11 and the multi-junctionphotovoltaic cell, makes light not absorbed by the multi-junctionphotovoltaic cell 17 to be reflected and enter the multi-junctionphotovoltaic cell 17 again. Because of this configuration, the lightabsorption rate of the multi-junction photovoltaic cell 17 can beimproved.

The reduction electrode layer 13 is formed on the reflecting layer 12.The reduction electrode layer 13 is formed on an n-type semiconductorlayer (n-type amorphous silicon layer 14 a, which will be describedlater) of the multi-junction photovoltaic cell 17. Thus, it is desirablethat the reduction electrode layer 13 is made from a material by whichthe reduction electrode layer is able to have ohmic contact with then-type semiconductor layer. The reduction electrode layer 13 is madefrom a metal such as Ag, Au, Al, and Cu or an alloy including at leastone of them. The reduction electrode layer 13 can also be made from atransparent conductive oxidation material such as ITO (Indium TinOxide), zinc oxide (ZnO), FTO (Fluorine doped Tin Oxide), AZO (Antimonydoped Zinc Oxide), and ATO (Antimony doped Tin Oxide). The reductionelectrode layer 13 may have a stacked structure of a metal and atransparent conductive oxidation material, a composite structure of ametal and another type of conductive material, or a composite structureof a transparent conductive oxidation material and another type ofconductive material.

The multi-junction photovoltaic cell 17 is formed on the reductionelectrode layer 13 and includes a first photovoltaic cell 14, a secondphotovoltaic cell 15, and a third photovoltaic cell 16. The firstphotovoltaic cell 14, the second photovoltaic cell 15, and the thirdphotovoltaic cell 16 are photovoltaic cells which use a pin junctionsemiconductor and each cell has a different light absorption wavelength.With a layered structure of these photovoltaic cells, the multi-junctionphotovoltaic cell 17 is able to absorb solar light over a wide range ofwavelengths and more efficient utilization of solar light energy becomespossible. A high open circuit voltage is also obtainable due to seriesconnection of the photovoltaic cells.

More specifically, the first photovoltaic cell 14 includes an n-typeamorphous silicon (a-Si) layer 14 a, an intrinsic amorphous silicongermanium (a-SiGe) layer 14 b, and a p-type microcrystal silicon (μc-Si)layer 14 c, stacked from the bottom in this order. The a-SiGe layer 14 bis a layer that absorbs light in a short wavelength range around 400 nm.That is, the first photovoltaic cell 14 develops charge separation withlight energy in the short wavelength range.

The second photovoltaic cell 15 includes an n-type a-Si layer 15 a, anintrinsic a-SiGe layer 15 b, and a p-type μc-Si layer 15 c, stacked fromthe bottom in this order. The a-SiGe layer 15 b is a layer that absorbslight in a medium wavelength range of around 600 nm. That is, the secondphotovoltaic cell 15 develops charge separation with light energy in themedium wavelength range.

The third photovoltaic cell 16 includes an n-type a-Si layer 16 a, anintrinsic a-SiGe layer 16 b, and a p-type μc-Si layer 16 c, stacked fromthe bottom in this order. The a-Si layer 16 b is a layer that absorbslight in a long wavelength range of around 700 nm. That is, the thirdphotovoltaic cell 16 develops charge separation with light energy in thelong wavelength range.

As described above, the multi-junction photovoltaic cell 17 is able todevelop charge separation with light of any wavelength. That is, holesmove to a positive side (front surface side) and electrons move to anegative side (back surface side). This charge separation causes themulti-junction photovoltaic cell 17 to produce photovoltaic power.

Although the multi-junction photovoltaic cell 17 configured with alaminate structure of three photovoltaic cells is described above, theconfiguration of the multi-junction photovoltaic cell is not limited tothis type. The multi-junction photovoltaic cell 17 may include alaminate structure of two or more than four photovoltaic cells. Onephotovoltaic cell can be used instead of the multi-junction photovoltaiccell 17. Although a photovoltaic cell using a pin junction semiconductoris described above, a photovoltaic cell using a pn junctionsemiconductor can be used instead. Although the semiconductor layer ismade from Si and Ge in the above example, the material is not limited tothem; it can also be made from a compound semiconductor such as GaAs,GaInP, AlGaInP, CdTe, and CuInGaSe. Furthermore, a variety of forms suchas a single crystal, a polycrystal, and an amorphous form can beapplied.

The oxidation electrode layer 18 is formed on the multi-junctionphotovoltaic cell 17. The oxidation electrode layer 18 is formed on thep-type semiconductor layer (p-type μc-Si layer 16 c) of themulti-junction photovoltaic cell 17. It is therefore desirable that theoxidation electrode layer 18 is made from a material which is able tohave ohmic contact with the p-type semiconductor layer. The oxidationelectrode layer 18 is made from a metal such as Ag, Au, Al, and Cu or analloy including at least one of them. The oxidation electrode layer 18can also be made from a transparent conductive oxidation material suchas ITO, ZnO, FTO, AZO, and ATO. The oxidation electrode layer 18 mayhave a laminated structure of a metal and a transparent conductiveoxidation material, a composite structure of a metal and another type ofconductive material, or a composite structure of a transparentconductive oxidation material and another type of conductive material.

In this embodiment, irradiated light reaches the multi-junctionphotovoltaic cell 17 passing through the oxidation electrode layer 18.The oxidation electrode layer 18 disposed on the light-irradiation sidetherefore has a light transmission property for irradiated light. Morespecifically, the light transmission rate of the oxidation electrodelayer 18 on the light-irradiation side needs to be at least 10% or more,more preferably 30% or more, of an amount of irradiated light.

The oxidation catalyst layer 19 is formed on the oxidation electrodelayer 18. The oxidation catalyst layer 19 is formed on the positive sideof the multi-junction photovoltaic cell 17 and produces O₂ and H⁺ byoxidizing H₂O. The oxidation catalyst layer 19 is therefore made from amaterial which decreases the activation energy for oxidizing H₂O. Inother words, the oxidation catalyst layer is made from a material whichlowers the overvoltage when producing O₂ and H⁺ by oxidizing H₂O. Suchmaterials include binary metallic oxides such as Manganese oxide (Mn—O),Iridium oxide (Ir—O), Nickel oxide (Ni—O), Cobalt oxide (Co—O), Ironoxide (Fe—O), Tin oxide (Sn—O), Indium oxide (In—O), and Ruthenium oxide(Ru—O), ternary metallic oxides such as Ni—Co—O, La—Co—O, Ni—La—O, andSr—Fe—O, quarternary metallic oxides such as Pb—Ru—Ir—O and La—Sr—Co—O,or a metal complex such as an Ru complex and an Fe complex. Theconfiguration of the oxidation catalyst layer 19 is not limited to afilm; the oxidation catalyst layer may be configured to be a grid,particulate, or wired structure.

In this embodiment, irradiated light reaches the multi-junctionphotovoltaic cell 17 passing through the oxidation catalyst layer 19 aswell as the oxidation electrode layer 18. The oxidation catalyst layer19 disposed on the light-irradiation side therefore has a lighttransmission property for irradiated light. More specifically, the lighttransmission rate of the oxidation catalyst layer 19 on thelight-irradiation side needs to be at least 10% or more, more preferably30% or more, of an amount of irradiated light.

The reduction catalyst layer 20 is formed on the back surface of thesubstrate 11. The reduction catalyst layer 20 is formed on the negativeside of the multi-junction photovoltaic cell 17 and produces a carboncompound (e.g., carbon monoxide (CO), formic acid (HCOOH), methane(CH₄), methanol (CH₃OH), or ethanol (C₂H₅OH)) by reducing CO₂. Thereduction catalyst layer 20 is therefore made from a material whichdecreases the activation energy for reducing CO₂. In other words, thereduction catalyst layer is made from a material which lowers theovervoltage when producing a carbon compound by reducing CO₂. Suchmaterials include a metal such as Au, Ag, Cu, Pt, Ni, Zn, C, graphene,CNT (carbon nanotube), fullerene, Ketjen black, and Pd or an alloyincluding at least one of them or a metal complex such as an Ru complexand an Re complex. The configuration of the reduction catalyst layer 20is not limited to a film; the reduction catalyst layer may be configuredto be a grid, particulate, or wired structure.

The substrate 11 can be positioned on any of the positive side andnegative side of the multi-junction photovoltaic cell 17. Although theoxidation catalyst layer 19 is disposed on the light incidence surfacein this embodiment, the reduction catalyst layer 20 can be disposed onthe light incidence surface. That is, in the photoelectrochemicalcell,the positions of the oxidation catalyst layer 19 and the reductioncatalyst layer 20, the positions of the oxidation electrode layer 18 andthe reduction electrode layer 13, and the polarities of themulti-junction photovoltaic cell are interchangeable. If such aninterchange is applied, it is desirable that the reduction catalystlayer 20 and the reduction electrode layer 13 have transparency.

A passivation layer may also be disposed on the front surface of themulti-junction photovoltaic cell 17 or between an electrode layer and acatalyst layer on the light-irradiation side (between the oxidationelectrode layer 18 and the oxidation catalyst layer 19 in thisembodiment). The passivation layer has conductivity and prevents themulti-junction photovoltaic cell from corroding in anoxidation-reduction reaction as well. Such a feature of the passivationlayer extends the battery life of the multi-junction photovoltaic cell17. The passivation layer also has a light transmission property whenneeded. The passivation layer can be a dielectric thin film such asTiO₂, ZrO₂, Al₂O₃, SiO₂, and HfO₂. The thickness needs to be desirably10 nm or less, more preferably 5 nm or less, to have conductivity viathe tunnel effect.

FIG. 2 is a cross-sectional view showing an operating principle of thephotoelectrochemicalcell of the embodiment. In FIG. 2, the reflectinglayer 12, the reduction electrode layer 13, and the oxidation electrodelayer 18 are not shown.

As shown in FIG. 2, light entering on the front side passes through theoxidation catalyst layer 19 and the oxidation electrode layer 18 andreaches the multi-junction photovoltaic cell 17. The multi-junctionphotovoltaic cell 17, if it absorbs light, produces photoexcitedelectrons and their pairing holes and separates them. That is, in eachphotovoltaic cell (the first photovoltaic cell 14, the secondphotovoltaic cell 15, and the third photovoltaic cell 16), chargeseparation in which photoexcited electrons move to the n-typesemiconductor layer side (the side facing the reduction catalyst layer20) and holes pairing with the photoexcited electrons move to the p-typesemiconductor layer (the side facing the oxidation catalyst layer 19)takes place. This charge separation causes the multi-junctionphotovoltaic cell 17 to produce photovoltaic power.

As described above, photoexcited electrons created inside themulti-junction photovoltaic cell 17 are used for the reduction reactionin the reduction catalyst layer 20, which is an anode, and holes areused for the oxidation reaction in the oxidation catalyst layer 19,which is a cathode. Accordingly, a reaction according to the formula (1)takes place in the vicinity of the oxidation catalyst layer 19 and areaction according to the formula (2) takes place in the vicinity of thereduction catalyst layer 20.

2H₂O→4H^(|)+O₂+4e ⁻  (1)

2CO₂+4H⁺+4e ⁻→2CO+2H₂O  (2)

As shown in the formula (1), H₂O is oxidized (losing an electron) and O₂and H⁺ are produced in the vicinity of the oxidation catalyst layer 19.H⁺ produced on the side where the oxidation catalyst layer 19 existsmoves to the side where the reduction catalyst layer 20 exists throughan ion transfer pathway, which will be described later.

As shown in the formula (2), in the vicinity of the reduction catalystlayer 20, a reaction between CO₂ and H⁺, which has moved there, takesplace and carbon monoxide (CO) and H₂O are produced. That is, CO₂ isreduced (attaining an electron).

In this process, the multi-junction photovoltaic cell 17 need to have anopen circuit voltage equal to or higher than the potential differencebetween the standard oxidation reduction potential of an oxidationreaction taking place in the oxidation catalyst layer 19 and thestandard oxidation reduction potential of a reduction reaction takingplace in the reduction catalyst layer 20. For example, the standardoxidation reduction potential of the oxidation reaction in the formula(1) is 1.23 [V] and the standard oxidation reduction potential of thereduction reaction in the formula (2) is −0.1 [V]. The open circuitvoltage of the multi-junction photovoltaic cell 17 thus needs to beequal to or higher than 1.33 [V]. More preferably, the open circuitvoltage needs to be equal to or higher than the potential differenceincluding the overvoltage. More specifically, in the case that theovervoltage in an oxidation reaction according to the formula (1) andthe overvoltage in a reduction reaction according to the formula (2) areboth 0.2 [V], the open circuit voltage needs to be equal to or higherthan 1.73 [V].

Not only the reduction reaction from CO₂ to CO shown in the formula (2)but also a reduction reaction from CO₂ to HCOOH, CH₄, CH₃OH, C₂H₅OH, orthe like is a reaction that consumes H⁺. If H⁺ produced in the oxidationcatalyst layer 19 cannot move to the reduction catalyst layer 20 at theopposite end, the overall reaction performance therefore becomes lower.In response to this, in this embodiment, a high reaction performance canbe achieved through improvement in H⁺ transfer by forming an iontransfer pathway through which H⁺ moves.

2. Photochemical Reaction Device

Referring to FIGS. 3 to 23, a photochemical reaction device using aphotoelectrochemicalcell of the embodiment will be described below.

2-1. First Embodiment

Referring to FIGS. 3 to 12, a photochemical reaction device of a firstembodiment will be described below.

A photochemical reaction device of the first embodiment has aphotoelectrochemicalcell configured in a laminated body of an oxidationcatalyst layer 19, a reduction catalyst layer 20, and a multi-junctionphotovoltaic cell 17 disposed therebetween and an ion transfer pathwaythrough which ions move between the oxidation catalyst layer 19 and thereduction catalyst layer 20. Due to this structure, H⁺ produced on theside where the oxidation catalyst layer 19 exists can be moved to thereduction catalyst layer 20 with high photoreaction efficiency andcarbon dioxide can be dissolved on the side where the reduction catalystlayer 20 exists by this H⁺. The first embodiment will be described indetail below.

Structure of First Embodiment

A structure of the photochemical reaction device of the first embodimentwill be described first below.

FIG. 3 is a perspective view showing a structure of the photochemicalreaction device of the first embodiment. FIG. 4 is a cross-sectionalview showing the structure of the photochemical reaction device of thefirst embodiment. In FIG. 3, an ion transfer pathway, which will bedescribed later, is not shown.

As shown in FIGS. 3 and 4, the photochemical reaction device of thefirst embodiment has a photoelectrochemicalcell, an electrolytic tank 31including the photoelectrochemicalcell therein, and an electrolytic tankflow path 41 connected to the electrolytic tank 31 and used as an iontransfer pathway.

The photoelectrochemicalcell is formed in flat layers and divides theelectrolytic tank 31 into at least two parts with the substrate 11. Thatis, the electrolytic tank 31 has an oxidation reaction electrolytic tank45, to which the oxidation catalyst layer 19 of thephotoelectrochemicalcell is disposed, and a reduction reactionelectrolytic tank 46, to which the reduction catalyst layer 20 of thephotoelectrochemicalcell is disposed. The oxidation reactionelectrolytic tank 45 and the reduction reaction electrolytic tank 46 canbe provided with different electrolytic solutions.

The oxidation reaction electrolytic tank 45 is filled with anelectrolytic solution, e.g., a liquid including H₂O. While such anelectrolytic solution may include any electrolyte, it is desirable thatan electrolytic solution which advances the oxidation reaction of H₂O ischosen. In the oxidation reaction electrolytic tank 45, O₂ and H⁺ areproduced through the oxidation of H₂O by the oxidation catalyst layer19.

The reduction reaction electrolytic tank 46 is filled with anelectrolytic solution, e.g., a liquid including CO₂. It is desirablethat the electrolytic solution in the reduction reaction electrolytictank 46 reduces the reduction potential of CO₂, has high ionconductivity, and has a CO₂ absorbent for absorbing CO₂. Such anelectrolytic solution includes an ionic liquid, which is made of salt ofa cation such as an imidazolium ion or a pyridinium ion and an anionsuch as BF₄ ⁻ and PF₆ ⁻ and is in a liquid state in a wide temperaturerange, or its aqueous solution. An amine solution such as ethanoleamine,imidazole, and pyridine or its aqueous solution can also be used as anelectrolytic solution. Any of a primary amine, secondary amine, tertiaryamine or quaternary amine can be used. A primary amine may be amethylamine, ethylamine, propylamine, butylamine, pentylamine, andhexylamine. A hydrocarbon in an amine can be replaced with an alcohol,halogen, or the like. An amine the hydrocarbon of which is replacedincludes, for example, a methanolamine, ethanolamine, chloromethylamine,etc. An unsaturated bond may exist for an amine. The replacement ofhydrocarbons applies to a secondary amine and a tertiary amine as well.A secondary amine includes a dimethylamine, diethylamine, dipropylamine,dipentylamine, dihexylamine, dimethanolamine, diethanolamine, anddipropanolamine. Different substances may replace hydrocarbons. Thisalso applies to a tertiary amine. An amine with different replacementsmay be, for example, a methylethylamine, methylpropylamine, etc. Atertiary amine may be a trimethylamine, triethylamine, tripropylamine,tributylamine, trihexylamine, trimethanolamine, triethanolamine,tripropanolamine, tributanolamine, tripropanolamine, trihexanolamine,methyldiethylamine, methyldipropylamine, etc. A cation in ionic liquidmay be a 1-ethyl-3-methylimidazolium ion,1-methyl-3-propylimidazoliumion, 1-butyl-3-methylimidazole ion,1-methyl-3-pentylimidazolium ion, 1-hexyl-3-methylimidazolium ion, etc.Position 2 of an imidazolium ion may be replaced by another substance.For example, such an imidazolium ion may be a1-ethyl-2,3-dimethylimidazolium ion, 1,2-dimethyl-3-propylimidazoliumion, 1-butyl-2,3-dimethylimidazolium ion,1,2-dimethyl-3-pentylimidazolium ion, 1-hexyl-2,3-dimethylimidazoliumion, etc. A pyridinium ion may be a methylpyridinium, ethylpyridinium,propylpyridinium, butylpyridinium, pentylpyridinium, hexylpyridinium,etc. For both the imidazolium ion and pyridinium ion, an alkyl group maybe replaced by another substance and an unsaturated bond may exist. Ananion may be a fluoride ion, chloride ion, bromide ion, iodide ion, BF₄⁻, PF₆ ⁻, CF₃COO⁻, CF₃SO₃ ⁻, NO₃ ⁻, SCN⁻, (CF₃SO₂)₃C⁻,bis(trifluoromethoxysulfonyl)imide, bis(trifluoromethoxysulfonyl)imide,bis(perfluoroethylsulfonyl)imide, etc. A dipolar ion that is made bycombining a cation and an anion in an ionic liquid with a hydrocarbonmay be used as well. In the reduction reaction electrolytic tank 46,carbon compounds are produced through the reduction of CO₂ by thereduction reaction layer 20.

Temperatures of the electrolytic solutions filling the oxidationreaction electrolytic tank 45 and the reduction reaction electrolytictank 46 may take the same value or different values depending on theirusage environment. If the electrolytic solution used for the reductionreaction electrolytic tank 46 is an amine absorbing solution whichincludes CO₂ emitted from a factory, for example, the temperature of theelectrolytic solution is higher than the atmospheric temperature. Inthis case, the electrolytic solution temperature needs to be 30° C. orhigher and 150° C. or lower, more preferably 40° C. or higher and 120°C. or lower.

The electrolytic tank flow path 41 is disposed, for example, side of theelectrolytic tank 31. One end of the electrolytic tank flow path 41 isconnected to the oxidation reaction electrolytic tank 45 and the otherend is connected to the reduction reaction electrolytic tank 46. Thatis, the electrolytic tank flow path 41 connects the oxidation reactionelectrolytic tank 45 with the reduction reaction electrolytic tank 46.

An ion exchange membrane 43 is disposed (filled) in a portion of theelectrolytic tank flow path 41 and allows a particular type of ion topass through. By this structure, the electrolytic solution of theoxidation reaction electrolytic tank 45 can be separated from theelectrolytic solution of the reduction reaction electrolytic tank 46,and only a particular type of ion can be moved through the electrolytictank flow path 41 equipped with the ion exchange membrane 43. That is,the photochemical reaction device has a diaphragm structure thatselectively allows substances to pass through. The ion exchange membrane43 in the above structure is a proton exchange membrane and is able tomake H⁺ produced in the oxidation reaction electrolytic tank 45 move tothe reduction reaction electrolytic tank 46. More specifically, thetypes of the ion exchange membrane 43 include a cation exchange membranesuch as Nafion and Flemion and an anion exchange membrane such asNeosepta and Selemion.

Another substance that can make ions move and separate electrolyticsolutions, e.g., an agar such as salt bridge, can be used instead of theion exchange membrane 43. By using a solid polymer membrane, which hasproton exchangeability and is represented by Nafion, in general, a highion movability can be attained.

The electrolytic tank flow path 41 may be equipped with a circulationmechanism 42 such as a pump. With the mechanism, ion (H⁺) circulationbetween the oxidation reaction electrolytic tank 45 and the reductionreaction electrolytic tank 46 can be improved. Two electrolytic tankflow paths 41 may be disposed and, by using the circulation mechanism 42attached to at least one of these electrolytic tank flow paths, ions maybe moved from the oxidation reaction electrolytic tank 45 to thereduction reaction electrolytic tank 46 via one of the electrolytic tankflow paths 41 and from the reduction reaction electrolytic tank 46 tothe oxidation reaction electrolytic tank 45 via the other electrolytictank flow path 41. A plurality of circulation mechanisms 42 may also beattached. In order to reduce diffusion of ions and circulate ions withhigher efficiency, a plurality (three or more) of electrolytic tank flowpaths 41 may be arranged. Making the liquid flow smoothly may also causebubbles of created gas not to stay on a surface of the electrode andelectrolytic layer and thus reduction in efficiency or light amountdistribution caused by sunlight scattering due to the bubbles to becontrolled. The liquid may be moved in either direction.

Producing a temperature difference between the electrolytic liquidsusing raised heat by radiating light on a surface of the multi-junctionphotovoltaic cell 17 may make ion diffusion decrease and ions circulatewith improved efficiency. In other words, ion movement can beaccelerated by convection other than ion diffusion. If the electrolyticsolution used for the reduction reaction electrolytic bath 46 is anamine absorbing solution which includes CO₂ emitted from a factory, forexample, the temperature of the electrolytic solution is higher thanatmosphere temperature. In this case, there is a difference intemperature between the electrolytic solution in the reduction reactionelectrolytic bath 46 and the electrolytic solution in the oxidationreaction electrolytic bath 45. As a result, the ion movement can beaccelerated.

Photovoltaic cell performance and catalyst performance can be controlledby disposing a temperature adjustment mechanism 44, which executestemperature control for electrolytic solutions, in the electrolytic tankflow path 41 and electrolytic tank 31 and executing temperature controlwith the mechanism. This arrangement can, for example, homogenize atemperature of the reaction system in order to stabilize and improve theperformance of the photovoltaic cell and catalyst. Temperature rise canalso be prevented for system stabilization. Temperature control mayalter the selectivity of the photovoltaic cell and catalyst and alsocontrol materials from them.

In this embodiment, an edge of the substrate 11 projects out over edgesof the multi-junction photovoltaic cell 17, the oxidation reaction layer19, and the reduction reaction layer 20. However, the arrangement is notlimited to this. The substrate 11, the multi-junction photovoltaic cell17, the oxidation reaction layer 19, and the reduction reaction layer 20may be flat plates with the same area.

Variations of First Embodiment

Next, a variation of the photochemical reaction device of the firstembodiment will be described below.

FIGS. 5 to 8 are cross-sectional views showing structures of variations1 to 4 of the photochemical reaction device of the first embodiment.Only differences from the above-described structure of the photochemicalreaction device of the first embodiment will be described.

As shown in FIG. 5, the variation 1 of the photochemical reaction deviceof the first embodiment has a photoelectrochemicalcell, an electrolytictank 31 which includes the photoelectrochemicalcell, and an opening 51which is formed in a substrate 11 as an ion transfer pathway.

The opening 51 is, for example, formed so as to penetrate the substrate11 at its edge from the side facing the oxidation reaction electrolytictank 45 to the side facing the reduction reaction electrolytic tank 46.With this arrangement, the opening 51 connects the oxidation reactionelectrolytic tank 45 with the reduction reaction electrolytic tank 46.

A portion of the opening 51 is filled with an ion exchange membrane 43,which makes particular ions pass through. This arrangement makes itpossible to separate the electrolytic solution in the oxidation reactionelectrolytic tank 45 from the electrolytic solution in the reductionreaction electrolytic tank 46 and, at the same time, to make particularions move via the opening 51 filled with the ion exchange membrane 43.

As shown in FIG. 6, a variation 2 of the photovoltaic reaction device ofthe first embodiment has a photoelectrochemicalcell, an electrolytictank 31 which includes the photoelectrochemicalcell, and an opening 51formed in a substrate 11, a multi-junction photovoltaic cell 17, anoxidation catalyst layer 19, and a reduction catalyst layer 20 as an iontransfer pathway.

The opening 51 is formed so as to penetrate the substrate 11, themulti-junction photovoltaic cell 17, the oxidation catalyst layer 19,and the reduction catalyst layer 20 from the side facing the oxidationreaction electrolytic tank 45 to the side facing the reduction reactionelectrolytic tank 46. With this arrangement, the opening 51 connects theoxidation reaction electrolytic tank 45 with the reduction reactionelectrolytic tank 46.

A portion of the opening 51 is filled with an ion exchange membrane 43,which makes particular ions pass through. This arrangement makes itpossible to separate the electrolytic solution in the oxidation reactionelectrolytic tank 45 from the electrolytic solution in the reductionreaction electrolytic tank 46 and, at the same time, to make particularions move via the opening 51 filled with the ion exchange membrane 43.At this time, it is preferable to form a passivation layer on an innersurface of the opening 51 to protect the multi-junction photovoltaiccell 17 from being corroded by oxidation reaction or an electrolyticsolution.

Although in FIG. 6, the ion exchange membrane 43 is disposed at aportion of the opening 51, the ion exchange membrane 43 may be formed soas to fill up the inside of the opening 51.

As shown in FIG. 7, a variation 3 of the photovoltaic reaction device ofthe first embodiment has a photoelectrochemicalcell, an electrolytictank 31 which includes the photoelectrochemicalcell, and an opening 51formed in a substrate 11, a multi-junction photovoltaic cell 17, anoxidation catalyst layer 19, and a reduction catalyst layer 20 as an iontransfer pathway.

The opening 51 is formed so as to penetrate the substrate 11, themulti-junction photovoltaic cell 17, the oxidation catalyst layer 19,and the reduction catalyst layer 20 from the side facing the oxidationreaction electrolytic tank 45 to the side facing the reduction reactionelectrolytic tank 46. With this arrangement, the opening 51 connects theoxidation reaction electrolytic tank 45 with the reduction reactionelectrolytic tank 46.

The ion exchange membrane 43 is disposed so as to cover thelight-irradiation surface (front surface of the oxidation catalyst layer19) of the photoelectrochemicalcell. Due to this arrangement, the end ofthe opening 51 facing the oxidation reaction electrolytic tank 45 iscovered with the ion exchange membrane 43. The ion exchange membrane 43allows only particular ions to pass through. This arrangement makes itpossible to separate the electrolytic solution in the oxidation reactionelectrolytic tank 45 from the electrolytic solution in the reductionreaction electrolytic tank 46 and, at the same time, to make particularions move via the opening 51 plugged with the ion exchange membrane 43.

Moreover, in the variation 3, a surface of the oxidation catalyst layer19 is covered with the ion exchange membrane 43. Due to thisarrangement, the ion exchange membrane 43 performs a role of apassivation layer for the oxidation catalyst layer 19 and themulti-junction photovoltaic cell 17 as well. Furthermore, the ionexchange membrane 43 may have a concave-convex structure, and a part ofthe oxidation catalyst layer 19 may be exposed through a concaveportion. With this structure, the part of the oxidation catalyst layer19 can be brought into contact with the electrolytic solution in theelectrolytic bath 31 for oxidation reaction. As a result, the oxidationreaction can be accelerated. Further, the ion exchange membrane 43 maybe provided to cover a surface of the reduction catalyst layer 20. Inother words, the ion exchange membrane 43 may be provided on either theoxidation catalyst layer 19 or the reduction catalyst layer 20.Alternatively, the ion exchange membrane 43 may be provided on both theoxidation catalyst layer 19 and the reduction catalyst layer 20.

As shown in FIG. 8, a variation 4 of the photovoltaic reaction device ofthe first embodiment has a photoelectrochemicalcell, an electrolytictank 31 which includes the photoelectrochemicalcell, and an opening 51formed in a multi-junction photovoltaic cell 17, an oxidation catalystlayer 19, and a reduction catalyst layer 20 as an ion transfer pathway.

In the variation 4, an ion exchange membrane 43 is disposed as areplacement of a substrate 11. That is, the multi-junction photovoltaiccell 17 and the oxidation catalyst layer 19 are disposed on the frontsurface and the reduction catalyst layer 20 is disposed on the backsurface of the ion exchange membrane 43.

The opening 51 is formed so as to penetrate the multi-junctionphotovoltaic cell 17 and the oxidation catalyst layer 19 from the sidefacing the oxidation reaction electrolytic tank 45 to the side facingthe reduction reaction electrolytic tank 46, and also to penetrate thereduction catalyst layer 20 from the side facing the oxidation reactionelectrolytic tank 45 to the side facing the reduction reactionelectrolytic tank 46. This arrangement configures a structure in whichthe ion exchange membrane 43 is disposed inside the opening 51. In otherwords, the side facing the oxidation reaction electrolytic tank 45 isseparated from the side facing the reduction reaction electrolytic tank46 with just the ion exchange membrane 43.

The ion exchange membrane 43 allows only particular ions to passthrough. This arrangement makes it possible to separate the electrolyticsolution in the oxidation reaction electrolytic tank 45 from theelectrolytic solution in the reduction reaction electrolytic tank 46and, at the same time, to make particular ions move via the opening 51plugged with the ion exchange membrane 43. Moreover, ions can be movedthrough not only the opening 51 but also projecting-out edges of the ionexchange membrane 43.

FIGS. 9 to 11 are plan views showing the structure of the photochemicalreaction device of the first embodiment and mainly illustrate examplesof the planar shape of the opening 51.

As shown in FIG. 9, the opening 51 is formed as, for example, athrough-hole 52 which penetrates the substrate 11, the multi-junctionphotovoltaic cell 17, the oxidation catalyst layer 19, and the reductioncatalyst layer 20 and the planar shape of the opening is circular. Aplurality of through-holes 52 may be formed in the embodiment. Theplurality of through-holes 52 are arranged in a square lattice along afirst axis and a second axis orthogonal to the first axis.

The lower limit for the diameter (equivalent circle diameter) of thethrough-holes 52, which allows H⁺ to move therethrough, is preferably0.3 nm or larger. The equivalent circle diameter above is defined as((4×area)/π)^(0.5).

The planar shape of the through-hole 52 is not limited to a circularshape. It may be elliptical, triangular, or square. The arrangement ofthe plurality of through-holes 52 is not limited to a square lattice andmay be a triangular lattice or random lattice. The through-hole 52 justneeds to have a continuous opening from the oxidation catalyst layer 19to the reduction catalyst layer 20 except the ion exchange membrane 43and need not have the same diameter throughout the layers. The diameterof the through-hole 52 from the oxidation catalyst layer 19 to themulti-junction photovoltaic cell 17 may differ from the diameter of thethrough-hole 52 from the reduction catalyst layer 20 to themulti-junction photovoltaic cell 17. Even if a burr or roughness emergeson the side wall of the through-hole 52 in a manufacturing process, itseffectiveness does not change.

As shown in FIG. 10, the opening 51 is formed as, for example, a slit 53which penetrates the substrate 11, the multi-junction photovoltaic cell17, the oxidation catalyst layer 19, and the reduction catalyst layer 20and the planar shape of the opening is rectangular”. A plurality ofslits 53 may be formed in this embodiment. The plurality of slits 53 mayextend along a first direction and be arranged in a row along a seconddirection.

The lower limit for the width (shortest width) of the slits 53, whichallows H⁺ to move therethrough, is preferably 0.3 nm or larger.

As shown in FIG. 11, the opening 51 is formed as, for example, a slit 54which isolates the substrate 11, the multi-junction photovoltaic cell17, the oxidation catalyst layer 19, and the reduction catalyst layer 20and the planar shape of the opening is rectangular. That is, a pluralityof laminated bodies each of which includes the substrate 11, themulti-junction photovoltaic cell 17, the oxidation catalyst layer 19,and the reduction catalyst layer 20 are formed and the slits 54 aredisposed among the plurality of laminated bodies. The plurality oflaminated bodies are supported by not-shown frames or the like. Aplurality of slits 54 may be formed in this embodiment. The plurality ofslits 54 may extend along a first direction in parallel and be arrangedin a row along a second direction. The planar shape of the substrate 11is not limited to a rectangle. The slits 54 may have various planarshapes in accordance with the planer shape of the substrate 11.

Manufacturing Method of First Embodiment

Next, a manufacturing method of the photochemical reaction device of thefirst embodiment will be described below. A case in which a through-hole52 is formed as an opening 51 used as an ion transfer pathway isdescribed below.

First, a structure including the substrate 11, the reflecting layer 12,the reduction electrode layer 13, the multi-junction photovoltaic cell17, and the oxidation electrode layer 18 is prepared. The reflectinglayer 12, the reduction electrode layer 13, the multi-junctionphotovoltaic cell 17, and the oxidation electrode layer 18 are formed onthe front surface of the substrate 11 in this order. A multi-junctionphotovoltaic cell 17, which is composed of a first photovoltaic cell 14,a second photovoltaic cell 15, and a third photovoltaic cell 16, made ofa pin junction semiconductor, is used for a photovoltaic cell.

Next, the oxidation catalyst layer 19 is formed on the oxidationelectrode layer 18 by a sputtering method or coating method. Theoxidation catalyst layer 19 is made from, for example, a binary metallicoxide such as Manganese oxide (Mn—O), Iridium oxide (Ir—O), Nickel oxide(Ni—O), Cobalt oxide (Co—O), Iron oxide (Fe—O), and Ruthenium oxide(Ru—O), a ternary metallic oxide such as Ni—Co—O, La—Co—O, Ni—La—O, andSr—Fe—O, a quarternary metallic oxide such as Pb—Ru—Ir—O and La—Sr—Co—O,or a metal complex such as an Ru complex and an Fe complex. Theconfiguration of the oxidation catalyst layer 19 is not limited to afilm; the oxidation catalyst layer may be configured to be a grid,particulate, or wired structure.

On the back surface of the substrate 11, the reduction catalyst layer 20is formed with, for example, a vacuum evaporation method, sputteringmethod, or coating method. The reduction catalyst layer 20 is made from,for example, a metal such as Au, Ag, Cu, Pt, C, Ni, Zn, graphen, CNT,fullerene, Ketjen black, and Pd or an alloy including at least one ofthem or a metal complex such as an Ru complex and an Re complex. Theconfiguration of the reduction catalyst layer 20 is not limited to afilm; the reduction catalyst layer may be configured to be a grid,particulate, or wired structure.

A photoelectrochemicalcell made of a laminated body of the substrate 11,the reflecting layer 12, the reduction electrode layer 13, themulti-junction photovoltaic cell 17, the oxidation electrode layer 18,the oxidation catalyst layer 19, and the reduction catalyst layer 20 isthus formed.

Next, a through-hole 52 which penetrates the photoelectrochemicalcellfrom the oxidation catalyst layer 19 to the reduction catalyst layer 20is formed.

One of the methods to form the through-hole 52 is, for example, etchingafter forming a mask pattern. More specifically, after forming a maskpattern on the oxidation catalyst layer 19 (on the front surface) or thereduction catalyst layer 20 (on the back surface), the substrate 11, thereflecting layer 12, the reduction electrode layer 13, themulti-junction photovoltaic cell 17, the oxidation electrode layer 18,the oxidation catalyst layer 19, and the reduction catalyst layer 20 areetched using the mask pattern.

The methods to form a mask pattern include a method by a widespreadoptical lithography or an electron beam lithography. A method usingimprint technology or a method using a block copolymer or molecularself-assembly pattern can be used as well. The methods of etchinginclude a dry etching method using a reactive gas such as achlorine-based gas or a wet etching method using an acid solution or analkaline solution. A direct processing method such as laser beammachining, press working, and cutting is useful in the sense that it hasan advantage in the small number of process steps.

The through-hole 52 is thus formed in the substrate 11, the reflectinglayer 12, the reduction electrode layer 13, the multi-junctionphotovoltaic cell 17, the oxidation electrode layer 18, the oxidationcatalyst layer 19, and the reduction catalyst layer 20. Next, disposingthe photoelectrochemicalcell to which the through-hole 52 is formed inthe electrolytic tank 31 completes an assembly of the photochemicalreaction device.

Effect of First Embodiment

According to the first embodiment described above, the photochemicalreaction device has a photoelectrochemicalcell configured in a laminatedbody of the oxidation catalyst layer 19, the reduction catalyst layer20, and the multi-junction photovoltaic cell 17 disposed therebetweenand the ion transfer pathway through which ions (H⁺) are moved betweenthe oxidation catalyst layer 19 and the reduction catalyst layer 20.With this configuration, H¹ produced in the oxidation catalyst layer 19can be transferred to the reduction catalyst layer 20 through the iontransfer pathway. As a result, a high photoreduction efficiency (solarenergy conversion efficiency) can be achieved by accelerating areductive decomposition of CO₂ in the reduction catalyst layer 20.

The energy (potential) necessary for the oxidation of H₂O in thevicinity of the oxidation catalyst layer 19 and the reduction of CO₂ inthe vicinity of the reduction catalyst layer 20 is provided by thephotovoltaic power produced in the multi-junction photovoltaic cell 17.To let light enter, a transparent electrode is generally used for anelectrode which is provided in order to collect photoexcited electronsproduced in charge separation in the photovoltaic cell of thecomparative example. However, because a transparent electrode has a highresistance, the efficiency in collecting electricity may be reduced.Thus, metal wirings which have no transparency are connected to thetransparent electrode as an auxiliary electrode in some cases. In thatcase, however, because irradiance decreases due to cutting-off ofincoming light by the metal wirings, the efficiency is further reduced.Furthermore, because the metal wirings are usually formed in long andslim shapes, the resistance of the electrode in collecting electricity(electrons) via the metal wirings increases.

In the first embodiment, the oxidation catalyst layer 19 and thereduction catalyst layer 20, both being flat plate-shaped, are disposedon the front surface and the back surface of the multi-junctionphotovoltaic cell 17, respectively. Due to this arrangement, anoxidation-reduction reaction takes place by the catalysts instantlyafter the multi-junction photovoltaic cell 17 produces chargeseparation. In other words, charge separation takes place at themulti-junction photovoltaic cell 17 and an oxidation-reduction reactiontakes place at the oxidation catalyst layer 19 and the reductioncatalyst layer 20. Due to this arrangement, photovoltaic power producedby the multi-junction photovoltaic cell 17 can efficiently be applied tothe oxidation catalyst layer 19 and the reduction catalyst layer 20without increasing the resistance caused by metal wirings.Simplification of a structure can also be achieved because forming metalwirings or the like is not necessary.

In a case in which electricity is collected from the photovoltaic cellvia metal wirings in the comparative example, the complexity of astructure leads to areas being enlarged. Thus, the area of an electrodeneeds to be reduced in order to secure a small size. As a result,reaction with high current density is necessary. In this case, because ahigh performance catalyst that can accelerate a reaction with highcurrent density is limited, a precious metal is often used.

In the first embodiment, the area of a portion other than the electrodeis not necessary because of a laminate structure of the multi-junctionphotovoltaic cell 17, the oxidation catalyst layer 19, and the reductioncatalyst layer 20. Thus, both a small size and an enlarged electrodearea can be achieved simultaneously and reaction with a relatively lowcurrent density is possible. With this configuration, a general purposemetal can be used due to a wide range of alternatives for a catalyticmetal. It is also easy to secure reaction selectivity.

The CO₂ photoreduction efficiency for a case in which the through-hole52 is formed as an ion transfer pathway in the first embodiment will bedescribed below.

FIG. 12 is a table of an experimental result showing CO₂ photoreductionefficiency in an example 1 in comparison with a comparative example.More specifically, the table shows CO₂ photoreduction efficiencies forexample 1 (1-1 to 1-12), all in relative values scaled to the CO₂photoreduction efficiency for the comparative example, which is assumedto be 1.00. Details of FIG. 12 will be described below.

Example 1 is an example of the photoelectrochemicalcell in thephotochemical reaction device of the first embodiment. Morespecifically, the photoelectrochemicalcell of example 1 has thethrough-hole 52 through which only H⁺ can be moved and the equivalentcircle diameter of which is relatively large. In example 1, twelvephotoelectrochemicalcells (sample cell numbers 1-1 to 1-12), thethrough-holes 52 of which have equivalent circle diameters of 50, 100,and 200 μm and area ratios of 10, 20, 30, and 40%, were produced andtheir CO₂ photoreduction efficiencies were evaluated. Thesephotoelectrochemicalcells in example 1 were produced as described below.

First, a structure that has the multi-junction photovoltaic cell 17including a pin-type a-Si layer, a-SiGe layer, and a-SiGe layer, theoxidation electrode layer 18 made from ITO and formed on the frontsurface of the multi-junction photovoltaic cell 17, the reductionelectrode layer 13 made from ZnO and formed on the front surface of themulti-junction photovoltaic cell 17, the reflecting layer 12 made fromAg and formed on the back surface of the reduction electrode layer 13,and the SUS substrate 11 formed on the back surface of the reflectinglayer 12 is prepared. In this configuration, the thickness of themulti-junction photovoltaic cell 17 is 500 nm, the thickness of theoxidation electrode layer 18 is 100 nm, the thickness of the reductionelectrode layer 13 is 300 nm, the thickness of the reflecting layer 12is 200 nm, and the thickness of the SUS substrate is 1.5 mm. Theoxidation catalyst layer 19 is disposed on the p-type surface of themulti-junction semiconductor and the reduction catalyst layer 20 isdisposed on the n-type surface of the multi-junction semiconductor.

Next, the oxidation catalyst layer 19 made from Co₃O₄ is formed on thefront surface of the oxidation electrode layer 18 by a sputteringmethod. On the back surface of the SUS substrate 11, the reductioncatalyst layer 20 made from Au is formed with a vacuum evaporationmethod. In this process, the thickness of the oxidation catalyst layer19 is 100 nm and the thickness of the reduction catalyst layer 20 is 100nm.

A laminated body (cell) of the substrate 11, the reflecting layer 12,the reduction electrode layer 13, the multi-junction photovoltaic cell17, the oxidation electrode layer 18, the oxidation catalyst layer 19,and the reduction catalyst layer 20 is thus formed. Next, light isirradiated on the laminated body from the side facing the oxidationcatalyst layer 19 by a solar simulator (AM1.5, 1000 W/m²) and the opencircuit voltage of the cell at the irradiation is measured. Based on themeasurement, the open circuit voltage of the cell is set to 1.9 [V].

Next, the through-hole 52 is formed in the cell. The through-hole 52 isformed by irradiating a laser beam on the prepared cell. Laser beamirradiation parameters are as follows: wavelength of 515 nm; pulse widthof 15 ps; and repetition frequency of 82 MHz. The laser beam isconcentrated with an object lens of 10-fold magnification and irradiatedon the cell. With this process, a plurality of through-holes 52 in anarrangement of a triangular lattice is formed in the cell. Next, eachthrough-hole 52 is trimmed using a laser beam again so as to beperpendicular.

Next, the cell to which the through-hole 52 is formed is cut into asquare shape and the edges of the cell are sealed with epoxy resin sothat the area of the exposed part is 1 cm². Then, an image of the cellis taken with an optical microscope or scanning electron microscope froman angle of view such that about one hundred through-holes 52 arecaptured and the equivalent circle diameter and area ratio of thethrough-hole 52 of each cell are measured with image processingsoftware. By the above process, the photoelectrochemicalcells (samplecell numbers 1-1 to 1-12) of example 1 were produced.

In contrast, the photoelectrochemicalcell of the comparative example isa photoelectrochemicalcell that has no through-hole 52 and has the samestructure as the cell of example 1 except the through-hole 52.

The CO₂ photoreduction efficiency was measured by a method to bedescribed below. First, the cell was dipped in a closed-system tank(electrolytic tank 31) which contained a solution of 0.1 M (mol/l) KHCO₃produced by bubbling CO₂ gas for ten minutes. Next, light was irradiatedon the cell from the side where the oxidation catalyst layer 19 existsby a solar simulator (AM1.5, 1000 W/m²) for ten minutes. Then, aquantitative analysis of gas contained in the tank was conducted by gaschromatogram mass spectrometry (GCMS). The result of the analysis showsdetected gases are O₂, H₂, and CO. The CO gas is produced by CO₂reduction. CO₂ photoreduction efficiencies are calculated from COquantities measured for the sample cells in example 1 and shown inrelative values scaled to the CO quantity produced for the cell of thecomparative example, which is assumed to be 1.00.

As shown in FIG. 12, the smaller the area ratio of the through-holes 52are, the higher CO₂ photoreduction efficiencies can be attained comparedto the comparative example, if the equivalent circle diameters of thethrough-holes 52 are the same in example 1. More specifically,regardless of the equivalent circle diameter of the through-hole 52, ahigh CO₂ photoreduction efficiency can be attained if the area ratio ofthe through-hole 52 is 10, 20, or 30%. This is a result of minimizingthe area ratio of the through-hole 52. That is, this is a result ofachieving an efficiency increase by H⁺ transfer improvement and avoidingan efficiency decrease caused by light absorption loss by controllingthe area decrease of the multi-junction photovoltaic cell 17. For thecases with the area ratio of 40% or more, however, the achievedphotoreduction efficiencies are less than that of the comparativeexample because the efficiency decrease caused by light absorption lossoutweighs the efficiency increase by H⁺ transfer improvement. From theresult of example 1, it can be said that the area ratio of thethrough-hole 52 needs to be 40% or less, more preferably 10% or less.However, this area ratio do not apply to cases in which lightdiffraction effect or scattering effect is available, as described for asecond embodiment later.

In example 1, the larger the equivalent circle diameter of thethrough-holes 52, the higher the CO₂ photoreduction efficiency attained,compared to the comparative example, if the area ratios of thethrough-holes 52 are the same. This is because a structure including athrough-hole 52 with a large equivalent circle diameter can have a largeprocessing range (processing area) per unit area, and the effect ofdamage caused by the processing can be reduced.

As described above, in the first embodiment, higher CO₂ photoreductionefficiencies compared with the comparative example can be attained byadjusting both the equivalent circle diameter and area ratio of thethrough-hole 52 for the cases in which the through-hole 52 is formed asan ion transfer pathway.

2-2. Second Embodiment

Referring to FIGS. 13 to 19, a photochemical reaction device of a secondembodiment will be described below.

According to the experimental result shown in FIG. 12, CO₂photoreduction efficiency for a case in which the through-hole 52 isformed as an ion transfer pathway is determined mainly by not only theH⁺ transfer efficiency but also the light absorption amount by themulti-junction photovoltaic cell 17. This is because, if thethrough-hole 52 is formed in the photoelectrochemicalcell, the area ofthe multi-junction photovoltaic cell 17 decreases, which leads to areduction in the light absorption amount. As a result, the number ofelectrons and holes created by light decreases and the decrease leads toa reduction in reaction efficiency of the oxidation-reduction reaction.Suppression of light absorption loss at the multi-junction photovoltaiccell 17 caused by forming the through-hole 52 is thus needed.

The second embodiment is an example in which the light absorption lossassociated with the decrease in the area of the multi-junctionphotovoltaic cell 17 is suppressed by adjusting the size, shape, orstructure of the through-hole 52. The second embodiment will bedescribed in detail below. In the description of the second embodiment,description of the same or similar features as the first embodiment willbe omitted and only differences will be described.

Structure of Second Embodiment

A structure of a photochemical reaction device of the second embodimentwill be described first below.

FIG. 13 is a cross-sectional view, taken along the line A-A in FIG. 9,showing a structure of a photochemical reaction device of the secondembodiment.

As shown in FIG. 13, one of the differences between first embodiment andthe second embodiment is that sizes of the through-holes 52 areprecisely defined. More specifically, a pitch w1 of the through-hole 52is 3 μm or less, or an equivalent circle diameter w2 of the through-hole52 is 1 μm or less. That is, the through-hole 52 in the secondembodiment is formed comparatively finely. Reasons for this will bedescribed below.

FIG. 14 is a graph showing a relation between the pitch w1 of thethrough-holes 52 and a light absorption rate by a multi-junctionphotovoltaic cell 17 in the photochemical reaction device of the secondembodiment. FIG. 15 is a graph showing a relation between the equivalentcircle diameter w2 of the through-holes 52 and the light absorption rateby the multi-junction photovoltaic cell 17 in the photochemical reactiondevice of the second embodiment.

In FIGS. 14 and 15, the sunlight absorption amount measured by RCWA(Rigorous Coupled Wave Analysis) is shown for a case in which aplurality of the through-holes 52 are arranged in a square lattice in ana-Si layer with a thickness of 550 nm. More specifically, a lightabsorption rate α(λ) for incident light perpendicularly entering thesurface of the sample and with a wavelength of 300 nm to 1000 nm iscalculated using Diffract MD (manufactured by Rsoft) and the sunlightabsorption amount A=Σα(λ)×I(λ) is calculated by multiplying sunlightspectrum I(λ) by the light absorption rate. FIGS. 14 and 15 show thesunlight absorption amounts in relative values scaled to a sunlightabsorption amount of an photochemical reaction device including nothrough-hole 52 (hereinafter, a comparative example), which is assumedto be 1. The computing is done for the cases in which the area ratios ofthe through-hole 52 are 9, 30, 50, and 70%.

As shown in FIG. 14, the light absorption rate decreases (to 1 or less)compared with the comparative example as the pitch w1 of thethrough-hole 52 increases. Similarly, as shown in FIG. 15, the lightabsorption rate decreases compared with the comparative example as theequivalent circle diameter w2 of the through-hole 52 increases. This isbecause the light absorption amount decreases by the volume of thethrough-hole 52 due to a geometrical interaction between incident lightand through-hole structure.

However, if the pitch w1 is 3 μm or less or the equivalent circlediameter w2 is 1 μm, there is no decrease in the absorption amountcompared with the comparative example and a high absorption amount canbe achieved. This is because incident light is diffracted and scatteredin the a-Si layer by the formed through-hole structure. That is, this isbecause, by diffraction and scattering, the incident light enters thea-Si layer, its optical path length is lengthened, and the lightabsorption amount by the a-Si layer increases.

Though a plurality of the through-holes 52 arranged in a square latticeis described above, using a triangular arrangement leads to a similarresult. The planar shape of the through-hole 52 is not limited to acircular shape. It may be elliptical, triangular, or square. The planarshape of the through-hole 52 need neither be a regular shape nor in aregular arrangement. If it has a structure with a cycle and fluctuationin diameters, a diffraction effect is attainable. Even if it has arandom structure, the light absorption amount can be increased due to alight scattering effect.

Manufacturing Method of Second Embodiment

Next, a manufacturing method of the photochemical reaction device of thesecond embodiment will be described below.

As with the first embodiment, a photoelectrochemicalcell made of alaminated body of the substrate 11, the reflecting layer 12, thereduction electrode layer 13, the multi-junction photovoltaic cell 17,the oxidation electrode layer 18, the oxidation catalyst layer 19, andthe reduction catalyst layer 20 is formed.

Next, a through-hole 52 which penetrates the photoelectrochemicalcellfrom the oxidation catalyst layer 19 to the reduction catalyst layer 20is formed.

More specifically, a resist is coated on the oxidation catalyst layer 19and baked first. Next, light or an electron beam is irradiated on theresist with exposure equipment or electron beam lithography and a resistpattern is formed by pre-bake and development processing.

Next, layers from the oxidation catalyst layer 19 to the reductioncatalyst layer 20 are etched by RIE (Reactive Ion Etching) using theresist pattern as a mask. That is, the oxidation catalyst layer 19, theoxidation electrode layer 18, the multi-junction photovoltaic cell 17,the reduction electrode layer 13, the reflecting layer 12, the substrate11, and the reduction catalyst layer 20 are etched in this order. Then,the resist is removed by an ashing processing.

The through-hole 52 is thus formed in the substrate 11, the reflectinglayer 12, the reduction electrode layer 13, the multi-junctionphotovoltaic cell 17, the oxidation electrode layer 18, the oxidationcatalyst layer 19, and the reduction catalyst layer 20. Next, disposingthe photoelectrochemicalcell to which the through-hole 52 is formed inthe electrolytic tank 31 completes an assembly of the photochemicalreaction device.

The substrate 11 may be made of a material that is hard to be processedby dry etching such as RIE due to its large thickness. Forming a finethrough-hole 52 according to the second embodiment to the substrate 11therefore becomes difficult. As shown in FIG. 16, from the viewpoint ofmanufacturing, the through-hole 52 may be formed with a method describedbelow.

A resist is coated on the oxidation catalyst layer 19 (on the frontsurface) and baked first. Next, light or an electron beam is irradiatedon the resist with exposure equipment or electron beam lithography and aresist pattern is formed by pre-bake and development processing.

Next, layers from the oxidation catalyst layer 19 to the reflectinglayer 12 are etched by RIE using the resist pattern as a mask. That is,the through-hole 52 is formed by etching the oxidation catalyst layer19, the oxidation electrode layer 18, the multi-junction photovoltaiccell 17, the reduction electrode layer 13, and the reflecting layer 12from the front surface side in this order. The substrate 11 and thereduction catalyst layer 20 are not etched at this moment. Then, theresist is removed by an ashing processing.

Next, a resist is formed on and protects exposed surfaces of the formedoxidation catalyst layer 19, oxidation electrode layer 18,multi-junction photovoltaic cell 17, reduction electrode layer 13, andreflecting layer 12. Then, a resist is coated on the reduction catalystlayer 20 (on the back surface) and baked. Next, light or an electronbeam is irradiated on the resist with exposure equipment or electronbeam lithography and a resist pattern is formed by pre-bake anddevelopment processing.

Next, layers from the reduction catalyst layer 20 to the substrate 11are etched by wet etching using the resist pattern as a mask. That is,the reduction catalyst layer 20 and the substrate 11 are etched from theback surface side in this order.

In this process, the substrate 11 and the reduction catalyst layer 20are etched isotropically by wet etching. As shown in FIG. 16, athrough-hole 62 that has a larger equivalent circle diameter than thethrough-hole 52 is thus formed in the substrate 11 and the reductioncatalyst layer 20.

Next, the resist over the oxidation catalyst layer 19, oxidationelectrode layer 18, multi-junction photovoltaic cell 17, reductionelectrode layer 13, and reflecting layer 12 and the resist over thereduction catalyst layer 20 are removed by applying ultrasonic cleaningin an organic solvent.

The through-hole 52 is thus formed in the oxidation catalyst layer 19,the oxidation electrode layer 18, the multi-junction photovoltaic cell17, the reduction electrode layer 13, and the reflecting layer 12 andthe through-hole 62 is formed in the reduction catalyst layer 20 and thesubstrate 11. Next, disposing the photoelectrochemicalcell to which thethrough-hole 52 is formed in the electrolytic tank 31 completes anassembly of the photochemical reaction device.

Effect of Second Embodiment

By the above-described second embodiment, effects similar to the effectsby the first embodiment can be attained.

According to the second embodiment, a pitch w1 of the through-holes 52formed in the photoelectrochemicalcell is set to 3 μm or less and anequivalent circle diameter w2 is set to 1 μm or less. With thisarrangement, incident light can be diffracted and scattered. As aresult, because the incident light entering on a surface of thethrough-hole 52 also enters the multi-junction photovoltaic cell 17, thelight absorption loss by the multi-junction photovoltaic cell 17 can belessened. Moreover, it is possible to increase the light absorptionamount by the multi-junction photovoltaic cell 17 due to a lengthenedoptical path length.

The CO₂ photoreduction efficiency in the second embodiment will bedescribed below.

FIG. 17 is a table of an experimental result showing CO₂ photoreductionefficiency in example 2 in comparison with the comparative example. Morespecifically, the table shows CO₂ photoreduction efficiencies for anexample 2 (2-1 to 2-4) as relative values scaled to the CO₂photoreduction efficiency of the comparative example, which is assumedto be 1.00. Details of FIG. 17 will be described below.

Example 2 is an example of the photoelectrochemicalcell in thephotochemical reaction device of the second embodiment. Morespecifically, the photoelectrochemicalcell of example 2 has thethrough-hole 52 through which only H⁺ can be moved and the equivalentcircle diameter of which is relatively small. In example 2, fourphotoelectrochemicalcells (sample cell numbers 2-1 to 2-4), thethrough-holes 52 of which have equivalent circle diameters of 0.1, 0.5,1.0, and 2.0 μm respectively and area ratios of 30%, were produced andtheir CO₂ photoreduction efficiencies were evaluated. Thesephotoelectrochemicalcells in example 2 were produced as described below.

First, a structure that has the multi-junction photovoltaic cell 17including a pin-type a-Si layer, a-SiGe layer, and a-SiGe layer, theoxidation electrode layer 18 made from ITO and formed on the frontsurface of the multi-junction photovoltaic cell 17, the reductionelectrode layer 13 made from ZnO and formed on the front surface of themulti-junction photovoltaic cell 17, the reflecting layer 12 made fromAg and formed on the back surface of the reduction electrode layer 13,and the SUS substrate 11 formed on the back surface of the reflectinglayer 12 is prepared. In this configuration, the thickness of themulti-junction photovoltaic cell 17 is 500 nm, the thickness of theoxidation electrode layer 18 is 100 nm, the thickness of the reductionelectrode layer 13 is 300 nm, the thickness of the reflecting layer 12is 200 nm, and the thickness of the SUS substrate 11 is 1.5 mm.

Next, the oxidation catalyst layer 19 made from Nickel oxide is formedon the front surface of the oxidation electrode layer 18 by a sputteringmethod. On the back surface of the SUS substrate 11, the reductioncatalyst layer 20 made from Ag is formed with a vacuum evaporationmethod. In this process, the thickness of the oxidation catalyst layer19 is 50 nm and the thickness of the reduction catalyst layer 20 is 100nm.

A laminated body (cell) of the substrate 11, the reflecting layer 12,the reduction electrode layer 13, the multi-junction photovoltaic cell17, the oxidation electrode layer 18, the oxidation catalyst layer 19,and the reduction catalyst layer 20 is thus formed.

Next, the through-hole 52 and the through-hole 62 are formed in thecell. The through-hole 52 and through-hole 62 are formed as follows.

First, a positive resist for i-line lithography or a positive electronbeam resist is coated on the oxidation catalyst layer 19 (on the frontsurface) by spin coat and then baked. Next, light or an electron beam isirradiated on the resist with exposure equipment or electron beamlithography and a resist pattern of an opening pattern in a triangularlattice is formed by pre-bake and development processing.

Next, layers from the oxidation catalyst layer 19 to the reflectinglayer 12 are etched by inductively-coupled plasma (ICP) RIE with use ofa chlorine-argon mixed gas using the resist pattern as a mask. That is,the through-hole 52 is formed by etching the oxidation catalyst layer19, the oxidation electrode layer 18, the multi-junction photovoltaiccell 17, the reduction electrode layer 13, and the reflecting layer 12from the front surface side in this order. The substrate 11 and thereduction catalyst layer 20 are not etched at this moment. Then, theresist is removed by an ashing processing.

Next, a resist is formed on and protects exposed surfaces of the formedoxidation catalyst layer 19, oxidation electrode layer 18,multi-junction photovoltaic cell 17, reduction electrode layer 13, andreflecting layer 12. Then, a positive resist for f-rays lithography iscoated on the reduction catalyst layer 20 (on the back surface) andbaked. Next, light or an electron beam is irradiated on the resist withexposure equipment or electron beam lithography and a resist pattern isformed by pre-bake and development processing.

Next, layers from the reduction catalyst layer 20 to the substrate 11are etched by wet etching by use of an acid using the resist pattern asa mask. That is, the reduction catalyst layer 20 and the substrate 11are etched from the back surface side in this order.

The substrate 11 and the reduction catalyst layer 20 are etchedisotropically by wet etching. A through-hole 62 that has a largerequivalent circle diameter than the through-hole 52 is therefore formedin the substrate 11 and the reduction catalyst layer 20. Thethrough-hole 62 has an equivalent circle diameter of 15 m and an arearatio of 10%. A plurality of the through-holes 62 are arranged in atriangular lattice.

Next, the resist over the oxidation catalyst layer 19, oxidationelectrode layer 18, multi-junction photovoltaic cell 17, reductionelectrode layer 13, and reflecting layer 12 and the resist over thereduction catalyst layer 20 are removed by applying ultrasonic cleaningin an organic solvent.

Next, the cell to which the through-hole 52 is formed is cut into asquare shape and the edges of the cell are sealed with epoxy resin sothat the area of exposed part is 1 cm². Then, an image of the cell istaken with an optical microscope or scanning electron microscope from anangle of view such that about one hundred through-holes 52 are capturedand the equivalent circle diameter and area ratio of the through-hole 52of each cell are measured with image processing software. By the aboveprocess, the photoelectrochemicalcells (sample cell numbers 2-1 to 2-4)of example 2 were produced.

In contrast, the photoelectrochemicalcell of the comparative example isa photoelectrochemicalcell that has no through-hole 52 (and nothrough-hole 62) and has the same structure as the cell of example 2except the through-hole 52.

The CO₂ photoreduction efficiency was measured by a method to bedescribed below. First, the cell was dipped in a closed-system tank(electrolytic tank 31) which contained a solution of 0.1 M (mol/l) KHCO₃produced by bubbling CO₂ gas for ten minutes. Next, light was irradiatedon the cell from the side where the oxidation catalyst layer 19 existsby a solar simulator (AM1.5, 1000 W/m²) for ten minutes. Then, aquantitative analysis of gas contained in the tank was conducted by gaschromatogram mass spectrometry (GCMS). The result of the analysis showsthat detected gases are O₂, H₂, and CO. The CO gas is produced by CO₂reduction. CO₂ photoreduction efficiencies are calculated from COquantities measured for the sample cells in example 2 and shown inrelative values scaled to the CO quantity produced for the cell of thecomparative example, which is assumed as 1.00.

As shown in FIG. 17, in example 2, if the equivalent circle diameter is0.1, 0.5, or 1.0 μm, a high CO₂ photoreduction efficiency can beachieved compared with the comparative example. This is because not onlyan efficiency increase by H⁺ transfer improvement is achieved but alsothe light absorption amount by the multi-junction photovoltaic cell 17is increased through the diffraction and scattering of incident lightcaused by a relatively shortened equivalent circle diameter. Inparticular, a higher CO₂ photoreduction efficiency can be attained forthe case of sample cell number 2-2 (with the equivalent circle diameterof 0.5 μm). However, if the equivalent circle diameter is 2.0 μm, thediffraction effect diminishes and an attainable advantage is smallerthan the comparative example.

As described above, in example 2 of the second embodiment, a high CO₂photoreduction efficiency compared with the comparative example can beattained by adjusting the equivalent circle diameter of the through-hole52 to 1 μm or less.

FIG. 18 is a table of an experimental result showing CO₂ photoreductionefficiency of an example 3 in comparison with the comparative example.More specifically, the table shows CO₂ photoreduction efficiencies forexample 3 (3-1 to 3-2) as relative values scaled to the CO₂photoreduction efficiency of a comparative example, which is assumed tobe 1.00. FIG. 19 is a plan view showing a structure of the photochemicalreaction device of example 3. FIG. 20 is a cross-sectional view showingthe structure of the photochemical reaction device of example 3. Detailsof FIGS. 18 to 20 will be described below.

An example 3 is an example of the photoelectrochemicalcell in thephotochemical reaction device of the second embodiment. Morespecifically, the photoelectrochemicalcell of example 2 has thethrough-hole 52 through which only H⁺ can be moved and the equivalentcircle diameter of which is relatively small.

As shown in FIGS. 19 and 20, in the photochemical reaction device ofexample 3, the equivalent circle diameter and the arrangement of aplurality of the through-holes 52 are random. In example 3, furthermore,the electrolytic solution touching the reduction catalyst layer 20 isdifferent from the electrolytic solution touching the oxidation catalystlayer 19 and a photochemical reaction is created by irradiating lightfrom the side where the reduction catalyst layer 20 exists.

In example 3, two photoelectrochemicalcells, a photoelectrochemicalcellhaving an ion exchange membrane 43 inside the through-hole 52 (samplecell number 3-1) and a photoelectrochemicalcell having no ion exchangemembrane (sample cell number 3-2), were produced and their CO₂photoreduction efficiencies were evaluated. Gas materials detected inthe above evaluation were also analyzed. These photoelectrochemicalcellsin example 3 were produced as described below.

First, a structure that has the multi-junction photovoltaic cell 17including an InGaP layer (a third photovoltaic cell 16), an InGaAs layer(a second photovoltaic cell 15), and a Ge layer (a first photovoltaiccell 14), all having p-n junctions, the reduction electrode layer 17made from ITO and formed on the front surface (light incidence surface)of the multi-junction photovoltaic cell 17, the oxidation electrodelayer 18 made from Au and formed on the back surface of themulti-junction photovoltaic cell 17 is prepared. In this configuration,p-type layers of the multi-junction photovoltaic cell 17 are disposed onthe side facing the oxidation electrode layer 18 and n-type layers ofthe multi-junction photovoltaic cell 17 are disposed on the side facingthe reduction electrode layer 13.

More specifically, the multi-junction photovoltaic cell 17 includesn-InGaAs (contact layer), n-AlInP (window layer), p-InGaP, p-AlInP (BackSurface Field (BSF) layer), p-AlGaAs (tunneling layer), p-InGaP(tunneling layer), n-InGaP (window layer), n-InGaAs, p-InGaP (BSFlayer), p-GaAs (tunneling layer), n-GaAs (tunneling layer), n-InGaAs,and p-Ge (Substrate).

Next, the oxidation catalyst layer 19 made from Nickel oxide is formedon the back surface of the oxidation electrode layer 18 by a sputteringmethod. On the front surface of the reduction electrode layer 13, thereduction catalyst layer 20 made from Ag is formed with a vacuumevaporation method. In this process, the thickness of the oxidationcatalyst layer 19 is 50 nm and the thickness of the reduction catalystlayer 20 is 15 nm.

The open circuit voltage of the cell when light is irradiated from theside facing the reduction catalyst layer 20 was measured by a solarsimulator (AM1.5, 1000 W/m²) and the measured value was 2.4 V.

A laminated body (cell) of the reduction electrode layer 13, themulti-junction photovoltaic cell 17, the oxidation electrode layer 18,the oxidation catalyst layer 19, and the reduction catalyst layer 20 isthus formed.

Next, the through-hole 52 and the through-hole 62 are formed in thecell. The through-hole 52 and through-hole 62 are formed as follows.

First, a positive resist for i-line lithography is coated on thereduction catalyst layer 20 (on the front surface) by spin coat andbaked on a hot plate. Next, a quartz stamper, which is a mold, isprepared. A pattern of the stamper is produced by copying a patternformed by the self-organization of a block copolymer. The pattern formedon the stamper has randomly-arranged pillars which have a wide range ofdiameters with an average equivalent circle diameter of 120 nm (with astandard deviation of 31 nm). In this process, the surface of thestamper is coated with a fluorine mold-releasing agent such asperfluoropolyether as a pre-process for mold-releasing to lower thesurface energy and improve the releasability of the stamper.

Next, the stamper is pressed against the resist at the temperature of128° C. and the pressure of 60 kN using a heater plate press. After thetemperature settles to room temperature, releasing the stampervertically forms a reverse pattern of the mold on the resist. By thisprocess, a resist pattern which has openings is created. Using thisresist pattern as an etching mask, the reduction catalyst layer 20 madefrom Ag is etched by ion milling and the reduction electrode layer 13made from ITO is etched by wet etching by use of an oxalic acid. TheInGaP layer 16 and InGaAs layer 15 of the multi-junction photovoltaiccell 17 is etched by ICP-RIE by use of chlorine gas. The through-hole 52is thus formed in the reduction catalyst layer 20, the reductionelectrode layer 13, the InGaP layer 16, and the InGaAs layer 15. The Gelayer 14, the oxidation electrode layer 18, and the oxidation catalystlayer 19 are not etched at this moment. Then, the resist is removed byan asking processing.

Next, a resist is formed on and protects exposed surfaces of the formedreduction catalyst layer 20, reduction electrode layer 13, InGaP layer16, and InGaAs layer 15. Then, a positive resist for i-ray lithographyis coated on the oxidation catalyst layer 19 (on the back surface) andbaked. Next, an exposure process and development process are executed tothe resist and a resist pattern of opening shapes is formed.

Next, the oxidation catalyst layer 19 made from Nickel oxide and theoxidation electrode layer 18 made from Au are etched by ion milling andthe Ge layer 14 is etched by wet etching by use of an acid. Thethrough-hole 62 is thus formed in the oxidation catalyst layer 19, theoxidation electrode layer 18, and the Ge layer 14. As a result, thethrough-hole 62 has an equivalent circle diameter of 30 μm and an arearatio of 15%. The plurality of the through-holes 62 are arranged in atriangular lattice.

Next, the resist over the reduction catalyst layer 20, reductionelectrode layer 19, InGaP layer 16, and InGaAs layer 15 and the resistover the oxidation catalyst layer 19 are removed by applying ultrasoniccleaning in an organic solvent.

In the case of the sample cell number 3-1, a portion of thethrough-holes 52 and 62 are plugged with an ion exchange membrane 43.More specifically, the ion exchange membrane 43 is formed inside thethrough-holes 52 and 62 by dipping in the Nafion solution and drying thecell.

Next, the cell to which the through-hole 52 is formed is cut into asquare shape and the edges of the cell are sealed with epoxy resin sothat the area of exposed part is 1 cm². By the above process, thephotoelectrochemicalcells (sample cell numbers 3-1) was produced.

The photoelectrochemicalcell of the sample cell number 3-2 is aphotoelectrochemicalcell that has no ion exchange membrane 43 inside thethrough-hole 52 (and the through-hole 62) and has a similar structure tothe photoelectrochemicalcell of the sample cell number 3-1 except theion exchange membrane.

In contrast, the photoelectrochemicalcell of the comparative example isa photoelectrochemicalcell that has no through-hole 52 (and thethrough-hole 62) or ion exchange membrane 43 and has the same structureas the cell of example 3 (sample cell numbers 3-1 and 3-2) except thethrough-hole 52.

FIG. 21 is a cross-sectional view showing an electrolytic tank 31 tomeasure the photochemical reaction device of example 3 and thecomparative example.

As shown in FIG. 21, the photoelectrochemicalcells of example 3 and thecomparative example are set to the central part of the electrolytic tank31, which is an H-shaped closed-system cell. In other words, theelectrolytic tank 31 has an oxidation reaction electrolytic tank 45, areduction reaction electrolytic tank 46, and a bridge part with a narrowwidth. The photoelectrochemicalcell is disposed to the narrow bridgepart. The photoelectrochemicalcell is set so that the oxidation catalystlayer 19 of the cell faces the oxidation reaction electrolytic tank 45and the reduction catalyst layer 20 of the cell faces the reductionreaction electrolytic tank 46. For an electrolytic solution in theoxidation reaction electrolytic tank 45, a sodium sulfate aqueoussolution of 0.5 mol/L is used. For an electrolytic solution in thereduction reaction electrolytic tank 46, a 2-aminoethanol(monoethanolamine) aqueous solution (40 wt %), produced by bubbling CO₂gas for two hours at a temperature of 40° C., is used.

The CO₂ photoreduction efficiency and gaseous materials were measured bya method to be described below. First, light was irradiated on the cellfrom the side where the reduction catalyst layer 20 exists by a solarsimulator (AM1.5, 1000 W/m²) for ten minutes. Then, a quantitativeanalysis of gas contained in each tank was conducted by the gaschromatogram mass spectrometry (GCMS). CO₂ photoreduction efficienciesare calculated from CO quantities measured for the sample cells inexample 3 and shown as relative values scaled to the CO quantityproduced for the cell of the comparative example, which is assumed to be1.00.

As shown in FIG. 18, in the cell of the sample cell number 3-1,dissimilar to the cell of the sample cell number 3-2, only H⁺ can movedue to an effect of the ion exchange membrane 43 disposed in thethrough-hole 52 (and the through-hole 62). Due to this structure,materials produced in each tank were detected separately. Morespecifically, H₂ and CO₂ were detected in the reduction reactionelectrolytic tank 46 and O₂ was detected in the oxidation reactionelectrolytic tank 45.

Even in the case that a plurality of the through-holes 52 (and thethrough-holes 62) have random sizes (equivalent circle diameters) and arandom arrangement as in example 3, a CO₂ photoreduction efficiency thatis sufficiently high compared with the comparative example can beattained. Moreover, in example 3, a CO₂ photoreduction efficiency thatis high compared with example 2 can also be attained. This is because,if the electrolytic solution in the oxidation reaction electrolytic tank45 is separated from the electrolytic solution in the reduction reactionelectrolytic tank 46 with a cell, the CO₂ photoreduction reactionextremely decreases in the comparative example where there is notransfer pathway (the through-hole 52 and through-hole 62) for H⁺. Thismeans that, as the cell size increases, H⁺ movement is impeded and theattainable photoreaction efficiency decreases for aphotoelectrochemicalcell having no transfer pathway for H⁺. As describedabove, a high photoreaction efficiency can be attained for a large-sizecell by providing an H⁺ transfer pathway.

Variations of Second Embodiment

Next, a variation of the photochemical reaction device of the secondembodiment will be described below.

FIGS. 22 and 23 are cross-sectional views showing structures of avariation 1 and variation 2 of the photochemical reaction device of thesecond embodiment. Only differences from the above-described structureof the photochemical reaction device of the second embodiment will bedescribed.

As shown in FIG. 22, in the variation 1 of the photochemical reactiondevice of the second embodiment, the through-hole 52 is formed so thatits equivalent circle diameter w2 becomes larger from the front surfaceside (incidence surface side) toward the back surface side. That is, thethrough-hole 52 is formed in a tapered shape such that its equivalentcircle diameter w2 becomes larger from the oxidation catalyst layer 19toward the reduction catalyst layer 20. Due to this structure, theequivalent circle diameter of the through-hole 52 in the multi-junctionphotovoltaic cell 17 at the front surface is larger than the equivalentcircle diameter of the through-hole 52 at the back surface. It ispreferable that the equivalent circle diameter of the through-hole 52 atthe back surface of the multi-junction photovoltaic cell 17 is 10 to 90%of the equivalent circle diameter of the through-hole 52 at the frontsurface.

The through-hole 52 with a tapered shape can be formed by adjusting theetching gas in the etching process by ICP-RIE. More specifically, thethrough-hole 52 with a tapered shape is formed by isotropic etchingusing a chlorine-argon mixed gas with a high mixture ratio of argon gasas an etching gas.

By forming the through-hole 52 in a tapered shape, a GI (Graded Index)effect, i.e., applying a gradient to the distribution of refractiveindex from the front surface side to the back surface side, can beprovided. With such GI effect, an antireflection effect, by which alight reflection component created upon light incidence is suppressed,can be attained. That is, because more light enters the multi-junctionphotovoltaic cell 17, it is possible to absorb more light. Animprovement of 10 to 15% over the photoreduction efficiency achieved bythe cells in example 2 due to the antireflection effect is indicated inthe result of a photoreduction efficiency measurement, which isconducted under the same conditions as in example 2.

As shown in FIG. 23, a passivation layer 61 is formed on the interiorsurface of the through-hole 52 in the variation 2 of the photochemicalreaction device of the second embodiment. In other words, thepassivation layer 61 is formed on sidewalls of the substrate 11,multi-junction photovoltaic cell 17, oxidation catalyst layer 19, andreduction catalyst layer 20 inside the through-hole 52. The passivationlayer 61 is made of a dielectric (insulator) thin film such as SiO₂,TiO₂, ZrO₂, Al₂O₃, and HfO₂. The thickness of the passivation layer 61is, for example, around 30 nm.

The passivation layer 61 is formed on the interior surface of thethrough-hole 52 and on the resist by ALD (Atomic Layer Deposition) orCVD (Chemical Vapor Deposition) after the etching process by ICP-RIE andbefore the removal of the resist over the oxidation catalyst layer 19.Thus, by removing the passivation layer 61 over the resist and theresist, the passivation layer 61 is formed only on the interior surfaceof the through-hole 52.

A method for forming the passivation layer 61 is not limited to the ALDor CVD method. The dipping method, which includes dipping of a cell intoa solution including metallic ions and heat treatment, is alsoeffective.

By forming the passivation layer 61 as a sidewall of the through-hole52, it becomes possible to suppress the leakage of electrons and holesfrom the multi-junction photovoltaic cell 17 and prevent themulti-junction photovoltaic cell 17 from being corroded by a solution.An improvement of 5 to 10% over the photoreduction efficiency achievedby the cells of example 2 due to the leakage prevention is indicated inthe result of a photoreduction efficiency measurement, which isconducted under the same conditions as in example 2.

2-3. Third Embodiment

Referring to FIGS. 24 to 27, a photochemical reaction device of a thirdembodiment will be described below. A photochemical reaction device ofthe third embodiment is an example in which a photoelectrochemicalcellis applied to a tubular (pipe-like) piping. With this structure, itbecomes possible to resolve CO₂, to easily transfer chemical compoundsproduced in the oxidation catalyst layer 19 and the reduction catalystlayer 20, and to use the compounds as chemical energy. The thirdembodiment will be described in detail below. In the description of thethird embodiment, description of the same or similar features as thephotochemical reaction device of the first embodiment will be omittedand only differences will be described.

Structure of Third Embodiment

A structure of a photochemical reaction device of the third embodimentwill be described first below.

FIG. 24 is a perspective view showing a structure of the photochemicalreaction device of the third embodiment. FIG. 25 is a cross-sectionalview showing the structure of the photochemical reaction device of thethird embodiment. In FIG. 24, an ion transfer pathway is not shown.

As shown in FIGS. 24 and 25, in the photochemical reaction device of thethird embodiment, a piping 101 is used as an electrolytic tank 31. Thephotovoltaic reaction device of the third embodiment has aphotoelectrochemicalcell, a piping 101 including (containing) thephotoelectrochemicalcell therein, and an opening 51 formed in asubstrate 11, a multi-junction photovoltaic cell 17, an oxidationcatalyst layer 19, and a reduction catalyst layer 20 as an ion transferpathway. In this description, a “piping” means a system of tubes orpipes for leading a fluid.

The photoelectrochemicalcell is formed in a cylindrical (tubular) shapethe outer surface of which is the light-irradiation side (the side wherethe oxidation catalyst layer 19 exists). That is, thephotoelectrochemicalcell has a tubular structure to which the oxidationcatalyst layer 19, the multi-junction photovoltaic cell 17, thesubstrate 11, and the reduction catalyst layer 20 are formed from theouter side in this order. This tubular structure divides the piping 101into two parts along a flow direction. The tubularphotoelectrochemicalcell and the tubular piping 101 need not have thesame central axis. In other words, their cross sections need not beconcentric. With this arrangement, the piping 101 has an oxidationreaction electrolytic tank 102 on the outer side, to which the oxidationcatalyst layer 19 of the photoelectrochemicalcell is disposed, and areduction reaction electrolytic tank 103 on the inner side, to which thereduction catalyst layer 20 of the photoelectrochemicalcell is disposed.The oxidation reaction electrolytic tank 102 and the reduction reactionelectrolytic tank 103 can be provided with different electrolyticsolutions. The photoelectrochemicalcell may have a reversed structure,i.e., the reduction catalyst layer 20, the multi-junction photovoltaiccell 17, the substrate 11, and the oxidation catalyst layer 19 areformed from the outer side in this order. In this case, the positions ofthe oxidation reaction electrolytic tank 102 and the reduction reactionelectrolytic tank 103 are also reversed.

The oxidation reaction electrolytic tank 102 is filled with anelectrolytic solution, e.g., a liquid including H₂O. In the oxidationreaction electrolytic tank 102, O₂ and H⁺ are produced through theoxidation of H₂O by the oxidation catalyst layer 19.

The reduction reaction electrolytic tank 103 is filled with anelectrolytic solution, e.g., liquid including CO₂. In the reductionreaction electrolytic tank 103, carbon compounds are produced throughthe reduction of CO₂ by the reduction reaction layer 20.

The opening 51 is formed so as to penetrate the substrate 11, themulti-junction photovoltaic cell 17, the oxidation catalyst layer 19,and the reduction catalyst layer 20 from the side facing the oxidationreaction electrolytic tank 102 to the side facing the reduction reactionelectrolytic tank 103. With this arrangement, the opening 51 connectsthe oxidation reaction electrolytic tank 102 with the reduction reactionelectrolytic tank 103.

A portion of the opening 51 is filled with an ion exchange membrane 43,which makes particular ions pass through. This arrangement makes itpossible to separate the electrolytic solution in the oxidation reactionelectrolytic tank 102 from the electrolytic solution in the reductionreaction electrolytic tank 103 and, at the same time, to make particularions move via the opening 51 plugged with the ion exchange membrane 43.The ion exchange membrane 43 in the above structure is a proton exchangemembrane and is able to make H⁺ produced in the oxidation reactionelectrolytic tank 102 move to the reduction reaction electrolytic tank103.

The photochemical reaction device of the third embodiment is configuredwith the piping 101. O₂ produced in the oxidation reaction electrolytictank 102 and CO produced in the reduction reaction electrolytic tank 103can thus be transferred easily by letting them flow through the piping101 in its flow direction. With this configuration, materials producedby resolving CO₂ can be utilized as chemical energy at each facility.

Variations of Third Embodiment

Next, a variation of the photochemical reaction device of the thirdembodiment will be described below.

FIG. 26 is a perspective view showing a variation of the structure ofthe photochemical reaction device of the third embodiment. FIG. 27 is across-sectional view showing a variation of the structure of thephotochemical reaction device of the third embodiment. In FIG. 26, anion transfer pathway is not shown.

As shown in FIGS. 26 and 27, in the variation of the photochemicalreaction device of the third embodiment, the piping 101 is used as theelectrolytic tank 31. In the photochemical reaction device of the thirdembodiment, the photoelectrochemicalcell disposed in the piping 101 isformed in a flat plate-shaped structure. This flat plate-shapedstructure divides the piping 101 into two parts along a flow direction.That is, the piping 101 has the oxidation reaction electrolytic tank102, for example, on the upper side, to which the oxidation catalystlayer 19 of the photoelectrochemicalcell is disposed, and the reductionreaction electrolytic tank 103, for example, on the lower side, to whichthe reduction catalyst layer 20 of the photoelectrochemicalcell isdisposed. The oxidation reaction electrolytic tank 102 and the reductionreaction electrolytic tank 103 can be provided with differentelectrolytic solutions.

The oxidation reaction electrolytic tank 102 is filled with anelectrolytic solution, e.g., liquid including H₂O. In the oxidationreaction electrolytic tank 102, O₂ and H⁺ are produced through theoxidation of H₂O by the oxidation catalyst layer 19.

The reduction reaction electrolytic tank 103 is filled with anelectrolytic solution, e.g., liquid including CO₂. In the reductionreaction electrolytic tank 103, carbon compounds are produced throughthe reduction of CO₂ by the reduction reaction layer 20.

The opening 51 is formed so as to penetrate the substrate 11, themulti-junction photovoltaic cell 17, the oxidation catalyst layer 19,and the reduction catalyst layer 20 from the side facing the oxidationreaction electrolytic tank 102 to the side facing the reduction reactionelectrolytic tank 103. With this arrangement, the opening 51 connectsthe oxidation reaction electrolytic tank 102 with the reduction reactionelectrolytic tank 103.

A portion of the opening 51 is plugged with an ion exchange membrane 43,which makes particular ions pass through. This arrangement makes itpossible to separate the electrolytic solution in the oxidation reactionelectrolytic tank 102 from the electrolytic solution in the reductionreaction electrolytic tank 103 and, at the same time, to make particularions move via the opening 51 plugged with the ion exchange membrane 43.The ion exchange membrane 43 in the above structure is a proton exchangemembrane and is able to make H⁺ produced in the oxidation reactionelectrolytic tank 102 move to the reduction reaction electrolytic tank103.

Effect of Third Embodiment

By the above-described third embodiment, effects similar to the effectsof the first embodiment can be attained.

In the third embodiment, moreover, a photoelectrochemicalcell is appliedto a tubular piping. With this structure, it becomes possible to easilytransfer chemical compounds produced in the oxidation catalyst layer 19and the reduction catalyst layer 20 through the piping structure in aflow direction. The produced compounds can be used as chemical energy.

Because the liquid is transferred in a flow, bubbles from the producedgas do not stay on the surfaces of electrodes and electrolytic layers.Because of this feature, the efficiency is not suppressed by sunlightscattering due to bubbles or the light amount distribution can becontrolled.

Application Example of Third Embodiment

Next, an application example of the photochemical reaction device of thethird embodiment will be described below.

FIG. 28 is a plan view showing an application example of thephotochemical reaction device of the third embodiment. Morespecifically, the example illustrates a case in which the photochemicalreaction device of the third embodiment configured as a tubular pipingis used as a system.

As shown in FIG. 28, the piping structure has the above-described piping101 composed of the oxidation reaction electrolytic tank 102 on theouter side and the reduction reaction electrolytic tank 103 on the innerside and a CO₂ flow channel 104, an H₂O flow channel 106, a CO flowchannel 105, and an O₂ flow channel 107 connected therewith.

The CO₂ flow channel 104 is connected to one end of the reductionreaction electrolytic tank 103 and the CO flow channel is connected tothe other end of the reduction reaction electrolytic tank 103. The H₂Oflow channel 106 is connected to one end of the oxidation reactionelectrolytic tank 102 and the O₂ flow channel 107 is connected to theother end of the oxidation reaction electrolytic tank 102. That is, thereduction reaction electrolytic tank 103 and the oxidation reactionelectrolytic tank 102, which compose the piping 101, branch at one endto form the CO₂ flow channel 104 and the H₂O flow channel 106,respectively. The reduction reaction electrolytic tank 103 and theoxidation reaction electrolytic tank 102, which compose the piping 101,also branch at the other end to form the CO flow channel 105 and the O₂flow channel 107, respectively.

To the CO₂ flow channel 104, CO₂ flows in from the outside. In the CO₂flow channel 104, CO₂ may flow in a gaseous state or in an electrolyticsolution or the like including a CO₂ absorbent. The CO₂ flow channel 104is made of a photoelectrochemicalcell that is formed in a tubular shapebecause the CO₂ flow channel 104 is connected (unified) with thereduction reaction electrolytic tank 103. However, the configuration isnot limited to this; any configuration with which CO₂ in a gaseous stateand an electrolytic solution including a CO₂ absorbent can flow in maybe used.

To the H₂O flow channel 106, H₂O flows in from the outside. In the H₂Oflow channel 106, H₂O may flow in a gaseous state or in a liquid state.The H₂O flow channel 106 is made of a structure that is similar to thepiping 101 formed in a tubular shape and has a light transmissionproperty because the H₂O flow channel 106 is connected (unified) withthe oxidation reaction electrolytic tank 102. However, the configurationis not limited to this; any configuration in which H₂O in a gaseousstate and a liquid state can flow may be used.

H₂O which has flowed in from the H₂O flow channel 106 flows in to theoxidation reaction electrolytic tank 102. Then, H₂O is oxidized by theoxidation catalyst layer 19 and O₂ and H⁺ are produced. To the reductionreaction electrolytic tank 103, CO₂ which has flowed in from the CO₂flow channel 104 flows in. Then, CO₂ is reduced by the reductioncatalyst layer 20 and carbon compounds (CO or the like) are produced.

The CO flow channel 105 makes the carbon compound such as CO produced inthe reduction reaction electrolytic tank 103 flow out to the outside. Inthe CO flow channel 105, CO may flow out in a gaseous state or in aliquid state. The CO flow channel 105 is connected to the other end ofthe reduction reaction electrolytic tank 103. The CO flow channel 105 isthus configured with a photoelectrochemicalcell formed in a tubularstructure. However, any structure by which CO in a gaseous state or aliquid state can flow out may be used.

The O₂ flow channel 107 makes O₂ produced in the oxidation reactionelectrolytic tank 102 flow out to the outside. In the O₂ flow channel107, O₂ may flow out in a gaseous state or in a liquid state. The O₂flow channel 107 is connected to the other end of the oxidation reactionelectrolytic tank 102. The O₂ flow channel 107 is thus configured with astructure similar to the tubular piping 101 with a light transmissionproperty. However, any structure by which O₂ in a gaseous state or aliquid state can flow out may be used.

A reflector 108 may be disposed on the light emitting surface side ofthe piping 101. The reflector 108 is, for example, a concave mirrordisposed in the tubular piping 101, which can reflect light and make itreenter the piping 101. With this configuration, the photochemicalreaction efficiency can be improved. Moreover, reflective conditions canbe changed by filling the piping 101 with a liquid. With thisconfiguration, the photochemical reaction efficiency can also beimproved by making light enter the piping 101 by reflection andrefraction at the piping 101 or the gas-liquid interface.

As described above, using the photochemical reaction device of the thirdembodiment, which is a tubular piping, it is possible to resolve CO₂which flows in from the outside and to make materials from theresolution flow out separately on the reduction side and the oxidationside.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1-16. (canceled) 17: A photochemical reaction device, comprising: alaminated body comprising: an oxidation catalyst layer for producingoxygen and protons by oxidizing water; a reduction catalyst layer forproducing carbon compounds by reducing carbon dioxide; and asemiconductor layer, formed between the oxidation catalyst layer and thereduction catalyst layer, for separating charges with light energy; andan electrolytic tank comprising the laminated body, an oxidationreaction electrolytic tank disposed on the oxidation catalyst layer sideand a reduction reaction electrolytic tank disposed on the reductioncatalyst layer side, the oxidation reaction electrolytic tank and thereduction reaction electrolytic tank being separated by the laminatedbody, wherein the laminated body comprises a slit penetrating thelaminated body, the slit moving ions between the oxidation catalystlayer side and the reduction catalyst layer side. 18: The device ofclaim 17, further comprising a passivation layer comprising adielectric, formed on an interior surface of the slit. 19: The device ofclaim 18, wherein the passivation layer comprises one selected from thegroup consisting of TiO₂, ZrO₂, Al₂O₃, SiO₂, and HfO₂. 20: Aphotochemical reaction device, comprising: a laminated body comprising:an oxidation catalyst layer for producing oxygen and protons byoxidizing water; a reduction catalyst layer for producing carboncompounds by reducing carbon dioxide; and a semiconductor layer, formedbetween the oxidation catalyst layer and the reduction catalyst layer,for separating charges with light energy; and an electrolytic tankcomprising the laminated body therein, an oxidation reactionelectrolytic tank disposed on the oxidation catalyst layer side and areduction reaction electrolytic tank disposed on the reduction catalystlayer side, the oxidation reaction electrolytic tank and the reductionreaction electrolytic tank being separated by the laminated body,wherein the laminated body comprises a slit isolating the laminated bodyto a first laminated body and a second laminated body, the slit movingions between the oxidation catalyst layer side and the reductioncatalyst layer side. 21: The device of claim 20, further comprising apassivation layer comprising a dielectric, formed on an interior surfaceof the slit. 22: The device of claim 21, wherein the passivation layercomprises one selected from the group consisting of TiO₂, ZrO₂, Al₂O₃,SiO₂, and HfO₂. 23: A photochemical reaction device, comprising: alaminated body comprising: an oxidation catalyst layer for producingoxygen and protons by oxidizing water; a reduction catalyst layer forproducing carbon compounds by reducing carbon dioxide; and asemiconductor layer, formed between the oxidation catalyst layer and thereduction catalyst layer, for separating charges with light energy; andan ion exchange membrane laminated to the laminated body; anelectrolytic tank comprising the laminated body, an oxidation reactionelectrolytic tank disposed on the oxidation catalyst layer side and areduction reaction electrolytic tank disposed on the reduction catalystlayer side, the oxidation reaction electrolytic tank and the reductionreaction electrolytic tank being separated by the laminated body and theion exchange membrane, wherein the laminated body comprises an openingpenetrating the laminated body, the opening moving ions between theoxidation catalyst layer side and the reduction catalyst layer side. 24:The device of claim 23, further comprises a passivation layer comprisinga dielectric, formed on an interior surface of the opening. 25: Thedevice of claim 24, wherein the passivation layer comprises one selectedfrom the group consisting of TiO₂, ZrO₂, Al₂O₃, SiO₂, and HfO₂. 26: Thedevice of claim 23, wherein the ion exchange membrane covers at leastone of a surface of the oxidation catalyst layer and a surface of thereduction catalyst layer. 27: The device of claim 23, wherein the ionexchange membrane is provided between the reduction catalyst layer andthe semiconductor layer. 28: The device of claim 27, wherein the ionexchange membrane supports the laminated body.